MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m , 27 A NVTFS020N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G NVTFWS020N06C Wettable Flank Option for Enhanced Optical V R MAX I MAX (BR)DSS DS(on) D Inspection 60 V 27 A 20.3 m 10 V AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant NChannel D (5 8) Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling BMS/Storage, Home Automation G (4) MAXIMUM RATINGS (T = 25C unless otherwise noted) J S (1, 2, 3) Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS MARKING GatetoSource Voltage V 20 V DIAGRAMS GS 1 Continuous Drain T = 25C I 27 A C D 1 Current R S D JC T = 100C 19 (Notes 1, 3) C XXXX WDFN8 S D Steady AYWW State ( 8FL) S D Power Dissipation T = 25C P 31 W C D G D CASE 511AB R (Note 1) JC T = 100C 15 C Continuous Drain T = 25C I 7 A A D Current R JA T = 100C 5 (Notes 1, 2, 3) A Steady XXXX State Power Dissipation T = 25C P 2.5 W AYWW A D R (Notes 1, 2) JA WDFNW8 T = 100C 1.2 A (FullCut 8FL) Pulsed Drain Current T = 25C, t = 10 s I 128 A A p DM CASE 515AN Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 XXXX = Specific Device Code A = Assembly Location Source Current (Body Diode) I 25 A S Y = Year WW = Work Week Single Pulse DraintoSource Avalanche E 17 mJ AS = PbFree Package Energy (I = 5.7 A) L(pk) (Note: Microdot may be in either location) Lead Temperature Soldering Reflow for Sol- T 260 C L dering Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information in the 1. The entire application environment impacts the thermal resistance values shown, package dimensions section on page 5 of this data sheet. they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: November, 2020 Rev. 1 NVTFS020N06C/DNVTFS020N06C THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Note 4) R 4.8 C/W JC JunctiontoAmbient Steady State (Note 4) R 59.7 JA 2 4. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 250 A, referenced to 25C 29 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 20 A 2.0 4.0 V GS(TH) GS DS D Negative Treshold Temperature V /T I = 20 A, referenced to 25C 7.8 mV/C GS(TH) J D Coefficient DraintoSource On Resistance R V = 10 V, I = 4 A 16.9 20.3 m DS(on) GS D Forward Transconductance g V = 5 V, I = 4 A 12 S FS DS D GateResistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES pF Input Capacitance C 355 iss V = 0 V, f = 1 MHz, GS Output Capacitance C 260 oss V = 30 V DS Reverse Transfer Capacitance C 4.9 rss nC Total Gate Charge Q 5.8 G(TOT) Threshold Gate Charge Q 1.4 G(TH) V = 10 V, V = 48 V, I = 4 A GS DS D GatetoSource Charge Q 2.3 GS GatetoDrain Charge Q 0.53 GD SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 6.5 ns d(on) Rise Time t 1.4 r V = 10 V, V = 48 V, GS DS I = 4 A, R = 6 D G TurnOff Delay Time t 9.7 d(off) Fall Time t 4.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.81 1.2 V SD J V = 0 V, GS I = 4 A S T = 125C 0.67 J Reverse Recovery Time t 24 ns RR Charge Time t 12 a V = 0 V, dl /dt = 100 A/ s, GS S V = 30 V, I = 4 A DS S Discharge Time t 12 b Reverse Recovery Charge Q 12 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2