MOSFET - Power, Single P-Channel -40 V, 69 m , -13.2 A NVTFS052P04M8L Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NVTFWS052P04M8L Wettable Flanks Product V R MAX I MAX (BR)DSS DS(on) D AECQ101 Qualified and PPAP Capable 69 m 10 V These Devices are PbFree, Halogen Free/BFRFree and are RoHS 40 V 13.2 A 100 m 4.5 V Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J PChannel MOSFET Parameter Symbol Value Unit D (58) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 13.2 A C D Current R JC G (4) T = 100C 9.4 (Notes 1, 2, 4) C Steady State Power Dissipation T = 25C P 23 W D C S (1,2,3) R (Notes 1, 2) JC T = 100C 11.5 C Continuous Drain I A T = 25C 4.7 A D MARKING DIAGRAM Current R JA T = 100C 3.3 (Notes 1, 3, 4) 1 A Steady 1 S D State Power Dissipation T = 25C P 2.9 W A D XXXX WDFN8 S D R (Notes 1, 3) JA AYWW ( 8FL) S D T = 100C 1.4 A G D CASE 511AB Pulsed Drain Current T = 25C, t = 10 s I 46 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg XXXX = Specific Device Code Range +175 A = Assembly Location Source Current (Body Diode) I 19 A Y = Year S WW = Work Week Single Pulse DraintoSource Avalanche E 54 mJ AS = PbFree Package Energy (I = 1.4 A) L(pk) (Note: Microdot may be in either location) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering, marking and shipping information in the assumed, damage may occur and reliability may be affected. package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit JunctiontoCase Steady State (Drain) R 6.5 C/W JC (Notes 1, 2 and 4) JunctiontoAmbient Steady State (Note 3) R 52 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Assumes heatsink sufficiently large to maintain constant case temperature independent of device power. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2020 Rev. 3 NVTFS052P04M8L/DNVTFS052P04M8L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 23 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 125C 1000 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 95 A 1.0 2.4 V GS(TH) GS DS D Negative Threshold Temperature Co- V /T 5.5 mV/C GS(TH) J efficient DraintoSource On Resistance R V = 10 V, I = 5 A 43.9 69 m DS(on) GS D V = 4.5 V, I = 2.5 A 66.5 100 GS D Forward Transconductance g V = 1.5 V, I = 15 A 11 S FS DS D CHARGES AND CAPACITANCES pF Input Capacitance C 424 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 161 oss V = 20 V DS Reverse Transfer Capacitance C 9.3 rss Total Gate Charge Q V = 4.5 V, V = 20 V I = 10 A 3.0 nC G(TOT) GS DS D V = 10 V, V = 20 V I = 10 A 6.3 GS DS D Threshold Gate Charge Q 0.8 G(TH) GatetoSource Charge Q 1.6 GS V = 10 V, V = 20 V, GS DS I = 10 A D GatetoDrain Charge Q 1.0 GD Plateau Voltage V 3.7 V GP SWITCHING CHARACTERISTICS, V = 4.5 V (Note 6) GS TurnOn Delay Time t 9.8 ns d(on) Rise Time t 28.5 r V = 4.5 V, V = 20 V, GS DS I = 10 A, R = 2.5 D G TurnOff Delay Time t 10.9 d(off) Fall Time t 6.1 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.88 1.25 V SD GS J I = 5 A S T = 125C 0.77 J Reverse Recovery Time t 21 ns RR Charge Time t 12.2 a V = 0 V, dI /dt = 100 A/ s, GS S I = 10 A S Discharge Time t 8.8 b Reverse Recovery Charge Q 9.1 52 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2