MOSFET - Power, Single N-Channel 80 V, 29 m , 22 A NVTFS6H880NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(ON) D NVTFS6H880NLWF Wettable Flanks Product AECQ101 Qualified and PPAP Capable 29 m 10 V 80 V 22 A These Devices are PbFree and are RoHS Compliant 38 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J NChannel Parameter Symbol Value Unit D (5 8) DraintoSource Voltage V 80 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 22 A C D Current R G (4) JC T = 100C 15 (Notes 1, 2, 3, 4) C Steady State Power Dissipation P W T = 25C 33 C D S (1, 2, 3) R (Notes 1, 2, 3) JC T = 100C 17 C Continuous Drain T = 25C I 6.6 A MARKING A D Current R JA DIAGRAMS T = 100C 4.7 (Notes 1, 3, 4) A Steady 1 State Power Dissipation T = 25C P 3.1 W 1 D A S D R (Notes 1, 3) JA XXXX WDFN8 S D T = 100C 1.5 A AYWW ( 8FL) S D Pulsed Drain Current T = 25C, t = 10 s I 83 A G D DM CASE 511AB A p Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 28 A S XXXX Single Pulse DraintoSource Avalanche E 70 mJ AS AYWW Energy (I = 1 A) L(pk) WDFNW8 Lead Temperature for Soldering Purposes T 260 C (FullCut 8FL) L (1/8 from case for 10 s) CASE 515AN Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be XXXX = Specific Device Code assumed, damage may occur and reliability may be affected. A = Assembly Location Y = Year THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) WW = Work Week = PbFree Package Parameter Symbol Value Unit (Note: Microdot may be in either location) JunctiontoCase Steady State (Note 3) R 4.6 C/W JC JunctiontoAmbient Steady State (Note 3) R 49 JA 1. The entire application environment impacts the thermal resistance values shown, ORDERING INFORMATION they are not constants and are only valid for the particular conditions noted. See detailed ordering, marking and shipping information in the 2. Psi ( ) is used as required per JESD51 12 for packages in which package dimensions section on page 5 of this data sheet. substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: November, 2020 Rev. 1 NVTFS6H880NL/DNVTFS6H880NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 80 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 20 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 5 A 24 29 m DS(on) GS D V = 4.5 V I = 5 A 30 38 m GS D Forward Transconductance g V = 8 V, I = 10 A 31 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 431 ISS Output Capacitance C 56 V = 0 V, f = 1 MHz, V = 40 V pF OSS GS DS Reverse Transfer Capacitance C 4 RSS Total Gate Charge Q V = 10 V, V = 40 V I = 10 A 9 G(TOT) GS DS D Threshold Gate Charge Q 1 G(TH) nC GatetoSource Charge Q 1.7 GS GatetoDrain Charge Q 1.5 V = 4.5 V, V = 40 V I = 10A GD GS DS D Plateau Voltage V 3 V GP Total Gate Charge Q 4 nC G(TOT) SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 7 d(ON) Rise Time t 9 r V = 4.5 V, V = 64 V, GS DS ns I = 10 A, R = 2.5 D G TurnOff Delay Time t 12 d(OFF) Fall Time t 4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.82 1.2 SD J V = 0 V, GS V I = 5 A S T = 125C 0.68 J Reverse Recovery Time t 25 RR Charge Time t 17 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 10 A S Discharge Time t 8 b Reverse Recovery Charge Q 17 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2