MOSFET - Power, Single P-Channel -40 V, 9.5 m , -64 A NVTFS9D6P04M8L Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NVTFWS9D6P04M8L Wettable Flanks Product V R MAX I MAX (BR)DSS DS(on) D AECQ101 Qualified and PPAP Capable 9.5 m 10 V These Devices are PbFree, Halogen Free/BFRFree and are RoHS 40 V 64 A Compliant 13.8 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit PChannel MOSFET DraintoSource Voltage V 40 V DSS D (58) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 64 A C D Current R JC T = 100C 46 (Notes 1, 2, 4) C Steady G (4) State Power Dissipation T = 25C P 75 W D C R (Notes 1, 2) JC T = 100C 38 S (1,2,3) C Continuous Drain I A T = 25C 13 A D Current R JA T = 100C 9 (Notes 1, 3, 4) MARKING DIAGRAM A Steady State Power Dissipation T = 25C P 3.2 W 1 A D 1 R (Notes 1, 3) S D JA T = 100C 1.6 A XXXX WDFN8 S D AYWW ( 8FL) S D Pulsed Drain Current T = 25C, t = 10 s I 311 A A p DM CASE 511AB G D Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 XXXX = Specific Device Code Source Current (Body Diode) I 62 A S A = Assembly Location Y = Year Single Pulse DraintoSource Avalanche E 220 mJ AS Energy (I = 8.5 A) WW = Work Week L(pk) = PbFree Package Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) See detailed ordering, marking and shipping information on page 5 of this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State (Drain) R 2 C/W JC (Notes 1, 2, 4) JunctiontoAmbient Steady State (Note 3) R 47 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Assumes heatsink sufficiently large to maintain constant case temperature independent of device power. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2020 Rev. 4 NVTFS9D6P04M8L/DNVTFS9D6P04M8L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 21 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 125C 1000 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 580 A 1.0 2.4 V GS(TH) GS DS D Negative Threshold Temperature Co- V /T 5 mV/C GS(TH) J efficient DraintoSource On Resistance R V = 10 V, I = 20 A 7.5 9.5 m DS(on) GS D V = 4.5 V, I = 10 A 10.7 13.8 GS D Forward Transconductance g V = 1.5 V, I = 15 A 46 S FS DS D CHARGES AND CAPACITANCES pF Input Capacitance C 2312 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 923 oss V = 20 V DS Reverse Transfer Capacitance C 31 rss Total Gate Charge Q V = 4.5 V 16.2 nC G(TOT) GS V = 20 V, DS I = 20 A D V = 10 V 34.6 GS Threshold Gate Charge Q 3.8 nC G(TH) GatetoSource Charge Q 6.9 GS V = 10 V, V = 20 V, GS DS I = 20 A D GatetoDrain Charge Q 4.1 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS, V = 4.5 V (Note 6) GS TurnOn Delay Time t 12.6 ns d(on) Rise Time t 91.5 r V = 4.5 V, V = 20 V, GS DS I = 20 A, R = 2.5 D G TurnOff Delay Time t 74.6 d(off) Fall Time t 49.3 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.86 1.25 V SD GS J I = 20 A S T = 125C 0.74 J Reverse Recovery Time t 38.8 ns RR Charge Time t 18.4 a V = 0 V, dI /dt = 100 A/ s, GS S I = 20 A S Discharge Time t 20.4 b Reverse Recovery Charge Q 19.7 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2