NVTFS005N04C Power MOSFET 40 V, 5.6 m , 69 A, Single NChannel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS005N04C Wettable Flanks Product AECQ101 Qualified and PPAP Capable V R MAX I MAX These Devices are PbFree and are RoHS Compliant (BR)DSS DS(on) D 40 V 69 A 5.6 m 10 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit NChannel DraintoSource Voltage V 40 V DSS D (5 8) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 69 A C D Current R JC T = 100C 39 (Notes 1, 2, 3, 4) C Steady G (4) State Power Dissipation T = 25C P 50 W C D R (Notes 1, 2, 3) JC T = 100C 16 C S (1, 2, 3) Continuous Drain T = 25C I 17 A A D Current R JA T = 100C 12 MARKING DIAGRAM (Notes 1, 3, 4) A Steady State 1 Power Dissipation T = 25C P 3.1 W A D 1 S D R (Notes 1, 3) JA XXXX T = 100C 1.6 WDFN8 S D A AYWW S D ( 8FL) Pulsed Drain Current T = 25C, t = 10 s I 297 A DM A p G D CASE 511AB Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 XXXX = Specific Device Code Source Current (Body Diode) I 42 A S A = Assembly Location Y = Year Single Pulse DraintoSource Avalanche E 103 mJ AS Energy (I = 4.6 A) WW = Work Week L(pk) = PbFree Package Lead Temperature for Soldering Purposes T 260 C L (Note: Microdot may be in either location) (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering, marking and shipping information in the THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) package dimensions section on page 5 of this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State (Note 3) R 3.0 C/W JC JunctiontoAmbient Steady State (Note 3) R 47.7 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2019 Rev. 1 NVTFS005N04C/DNVTFS005N04C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 40 A 2.5 3.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 35 A 4.7 5.6 m DS(on) GS D Forward Transconductance g V = 15 V, I = 35 A 53 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1000 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 530 oss V = 25 V DS Reverse Transfer Capacitance C 22 rss Threshold Gate Charge Q 3.2 nC G(TH) GatetoSource Charge Q 5.7 GS V = 10 V, V = 32 V, I = 35 A GS DS D GatetoDrain Charge Q 2.7 GD Total Gate Charge Q V = 10 V, V = 32 V, I = 35 A 16 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 72 r V = 10 V, V = 32 V, GS DS I = 35 A D TurnOff Delay Time t 24 d(off) Fall Time t 8 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, GS I = 35 A S T = 125C 0.75 J Reverse Recovery Time t 36 ns RR Charge Time t 17 a V = 0 V, dl /dt = 100 A/ s, GS S I = 35 A S Discharge Time t 18 b Reverse Recovery Charge Q 16 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2