MOSFET Power, Single, P-Channel -40 V, 13.8 m , -49 A NVTFS014P04M8L Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L Wettable Flanks Product V R MAX I MAX (BR)DSS DS(on) D AECQ101 Qualified and PPAP Capable 13.8 m 10 V These Devices are PbFree, Halogen Free/BFRFree and are RoHS 40 V 49 A Compliant 18.7 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit PChannel MOSFET DraintoSource Voltage V 40 V DSS D (58) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 49 A C D Current R JC T = 100C 35 (Notes 1, 2, 4) C G (4) Steady State Power Dissipation T = 25C P 61 W C D R (Notes 1, 2) JC S (1,2,3) T = 100C 30 C Continuous Drain T = 25C I 11.3 A A D Current R JA T = 100C 8 MARKING DIAGRAM (Notes 1, 3, 4) A Steady State 1 Power Dissipation T = 25C P 3.2 W A D 1 R (Notes 1, 3) S D JA T = 100C 1.6 A XXXX WDFN8 S D AYWW ( 8FL) S D Pulsed Drain Current I 224 A T = 25C, t = 10 s A p DM CASE 511AB G D Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 XXXX = Specific Device Code Source Current (Body Diode) I 50 A S A = Assembly Location Y = Year Single Pulse DraintoSource Avalanche E 143 mJ AS WW = Work Week Energy (I = 6.1 A) L(pk) = PbFree Package Lead Temperature for Soldering Purposes T 260 C L (Note: Microdot may be in either location) (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State (Drain) R 2.5 C/W JC (Notes 1, 2, 4) JunctiontoAmbient Steady State (Note 3) R 47 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Assumes heatsink sufficiently large to maintain constant case temperature independent of device power. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2020 Rev. 4 NVTFS014P04M8L/DNVTFS014P04M8L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 21 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 125C 1000 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 420 A 1.0 2.4 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.1 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 15 A 10 13.8 m DS(on) GS D V = 4.5 V, I = 7.5 A 14.6 18.7 GS D Forward Transconductance g V = 1.5 V, I = 15 A 42 S FS DS D CHARGES AND CAPACITANCES pF Input Capacitance C 1734 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 682 oss V = 20 V DS Reverse Transfer Capacitance C 32 rss Total Gate Charge Q V = 4.5V 12.5 nC G(TOT) GS V = 20 V, DS I = 20 A D V = 10V 26.5 GS Threshold Gate Charge Q 2.6 nC G(TH) GatetoSource Charge Q 5.6 GS V = 10 V, V = 20 V, GS DS I = 30 A D GatetoDrain Charge Q 3.8 GD Plateau Voltage V 3.2 V GP SWITCHING CHARACTERISTICS, V = 4.5 V (Note 6) GS TurnOn Delay Time t 11.5 ns d(on) Rise Time t 97.4 r V = 4.5 V, V = 20 V, GS DS I = 30 A, R = 2.5 D G TurnOff Delay Time t 44.5 d(off) Fall Time t 38.2 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.86 1.25 V SD GS J I = 15 A S T = 125C 0.74 J Reverse Recovery Time t 34.9 ns RR Charge Time t 15.8 a V = 0 V, dI /dt = 100 A/ s, GS S I = 10 A S Discharge Time t 19.1 b Reverse Recovery Charge Q 16.3 52 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2