NZQA6V8AXV5T3G ON Semiconductor

NZQA5V6AXV5 Series Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and NZQA5V6AXV5 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage @ I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current @ V I R RWM T V Breakdown Voltage @ I BR T I Test Current T Maximum Temperature Coefficient of V V BR BR I PP I Forward Current F UniDirectional V Forward Voltage @ I F F Z Maximum Zener Impedance @ I ZT ZT I Reverse Current ZK Z Maximum Zener Impedance @ I ZK ZK *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C) A Typ Typ Capacitance Capacitance Breakdown Leakage @ 0 V Bias @ 3 V Bias (pF) (pF) Voltage Current V Max @ I C PP (Note 4) (Note 3) (Note 3) V @ 1 mA (V) I @ V V BR RM RM C Per I V I IEC61000 4 2 Device RWM C PP (A) (V) (A) (Note 5) Device Marking Min Nom Max V Typ Max Typ Max RWM NZQA5V6AXV5 5P 5.3 5.6 5.9 3.0 1.0 13 1.6 13 17 7.0 11.5 Figures 1 and 2 (See Below) NZQA6V8AXV5 6H 6.47 6.8 7.14 4.3 1.0 13 1.6 12 15 6.7 9.5 3. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25C R A 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000 4 2 Negative 8 kV Contact per IEC61000 4 2