P6SMB150AT3 ON Semiconductor

P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) T = 25C, Pulse Width = 1 ms P 600 W L PK DC Power Dissipation T = 75C Measured Zero Lead Length (Note 2) P 3.0 W L D Derate Above 75C 40 mW/C Thermal Resistance from JunctiontoLead R 25 C/W JL DC Power Dissipation (Note 3) T = 25C P 0.55 W A D Derate Above 25C 4.4 mW/C Thermal Resistance from JunctiontoAmbient R 226 C/W JA Forward Surge Current (Note 4) T = 25C I 100 A A FSM Operating and Storage Temperature Range T , T 65 to +150 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 s, nonrepetitive 2. 1 square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 3.5 V Max. I A F F (Note 4) = 30 A, V = 1.3 V Max. I (Note 4) = 3 A) (Note 5) F F I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V R RWM V I V R F I V Breakdown Voltage I T BR T I Test Current T Maximum Temperature Coefficient of V V BR BR I I Forward Current F PP V Forward Voltage I F F UniDirectional TVS 5. 1/2 sine wave or equivalent, PW = 8.3 ms, nonrepetitive duty cycle