S1M ON Semiconductor

DATA SHEET www.onsemi.com General-Purpose Rectifiers 2 1 S1A - S1M Anode Cathode Description In the world of commodity rectifiers, onsemi S1 family of 1 A, 1 PIN, SMA rectifiers stand out for their optimized low leakage, low capacitance, and fast response time. This was achieved while maintaining the industry standard V max of 1.1 V at 1 A and a 30 A F surge rating. In todays world, where system power efficiency is a 2 critical differentiating feature, these advantages can be leveraged to support those higher efficiency goals. SMA CASE 403AE Features 1 AI Current Rating F(AV) Glass Passivated MARKING DIAGRAM Low Leakage: 1 A Maximum at 25C ON ZXYY 50 A Maximum at 125C DDDD Fast Response: 1.8 s (Typical) 30 A Surge Rating 50 V to 1000 V Reverse Voltage Ratings Z = Assembly Plant Code X = Last Digit of Year of Manufacture 6.6 pF Typical Capacitance YY = Weekly Code of Manufacture UL Certified, UL E258596 DDDD = Specific Device Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION Part Number Device Code Marking Package Shipping S1A S1A DO214AC (SMA) 7500 / Tape & Reel (PbFree) S1B S1B 7500 / Tape & Reel S1D S1D 7500 / Tape & Reel S1G S1G 7500 / Tape & Reel S1J S1J 7500 / Tape & Reel S1K S1K 7500 / Tape & Reel S1M S1M 7500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: August, 2021 Rev. 3 S1M/DS1A S1M ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) (Note 1) A Value S1A S1B S1D S1G S1J S1K S1M Symbol Parameter Unit V Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V RRM I Average Rectified Forward Current at 1.0 A F(AV) T = 100C A I NonRepetitive Peak Forward Surge 30 A FSM Current 8.3 ms Single HalfSineWave T Storage Temperature Range 55 to +150 C STG T Operating Junction Temperature 55 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired. THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 1) A Symbol Characteristic Value Unit P Power Dissipation 1.4 W D R Thermal Resistance, Junction to Ambient (Note 2) 85 C/W JA Thermal Resistance, Junction to Ambient (Note 3) 170 C/W R JA JunctionLead Thermal Characteristics (Note 3) 25 C/W JL 2 2. Device mounted on FR4 PCB, land pattern size: 25 mm (5 x 5 mm). 2 3. Device mounted on FR4 PCB, land pattern size: 4.6375 mm (2.65 x 1.75 mm). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Unit V Forward Voltage I = 1.0 A 1.1 V F F t Reverse Recovery Time I = 0.5 A, I = 1.0 A 1.8 s rr F R I = 0.25 A rr I Reverse Current at Rated V T = 25C 1.0 A R R A TA = 125C 50 C Junction Capacitance V = 4.0 V, f = 1.0 MHz 6.6 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2