MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific stateoftheart die designed for use in 220 V lineoperated switchmode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements: 8.0 AMPERES High and Flat DC Current Gain h FE 1000 VOLTS Fast Switching 45 and 125 WATTS No Coil Required in Base Circuit for TurnOff (No Current Tail) Tight Parametric Distributions are Consistent LottoLot COLLECTOR 2,4 Two Package Choices: Standard TO220 or Isolated TO220 MJF18008, Case 221D, is UL Recognized at 3500 V : File RMS E69369 1 BASE These Devices are PbFree and are RoHS Compliant* 3 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit CollectorEmitter Sustaining Voltage V 450 Vdc MARKING CEO DIAGRAMS CollectorBase Breakdown Voltage V 1000 Vdc CES 4 EmitterBase Voltage V 9.0 Vdc EBO Collector Current Continuous I 8.0 Adc C Collector Current Peak (Note 1) I 16 Adc MJE18008G CM AYWW Base Current Continuous I 4.0 Adc B TO220AB Base Current Peak (Note 1) I 8.0 Adc BM CASE 221A09 1 2 STYLE 1 RMS Isolation Voltage (Note 2) V MJF18008 V ISOL 3 Test No. 1 Per Figure 22a 4500 Test No. 1 Per Figure 22b 3500 Test No. 1 Per Figure 22c 1500 (for 1 sec, R.H. < 30%, T = 25 C) A Total Device Dissipation T = 25 C P W C D 125 MJE18008 W/ C TO220 FULLPACK MJF18008G MJF18008 45 CASE 221D Derate above 25C MJE18008 1.0 AYWW STYLE 2 MJF18008 0.36 UL RECOGNIZED 1 2 Operating and Storage Temperature T , T 65 to 150 C J stg 3 THERMAL CHARACTERISTICS Characteristics Symbol Max Unit G = PbFree Package A = Assembly Location Thermal Resistance, JunctiontoCase R C/W JC Y = Year MJE18008 1.0 WW = Work Week MJF18008 2.78 Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA ORDERING INFORMATION Maximum Lead Temperature for Soldering T 260 C L See detailed ordering and shipping information in the package Purposes 1/8 from Case for 5 Seconds dimensions section on page 7 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be *For additional information on our PbFree strategy assumed, damage may occur and reliability may be affected. and soldering details, please download the 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. ON Semiconductor Soldering and Mounting 2. Proper strike and creepage distance must be provided. Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 10 MJE18008/DMJE18008, MJF18008 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 100 mA, L = 25 mH) V 450 Vdc C CEO(sus) Collector Cutoff Current (V = Rated V , I = 0) I 100 Adc CE CEO B CEO Collector Cutoff Current (V = Rated V , V = 0) I 100 Adc CE CES EB CES (T = 125 C) 500 C Collector Cutoff Current (V = 800 V, V = 0) (T = 125 C) 100 CE EB C Emitter Cutoff Current (V = 9.0 Vdc, I = 0) I 100 Adc EB C EBO ON CHARACTERISTICS BaseEmitter Saturation Voltage (I = 2.0 Adc, I = 0.2 Adc) V 0.82 1.1 Vdc C B BE(sat) BaseEmitter Saturation Voltage (I = 4.5 Adc, I = 0.9 Adc) 0.92 1.25 C B CollectorEmitter Saturation Voltage V Vdc CE(sat) 0.6 (I = 2.0 Adc, I = 0.2 Adc) 0.3 C B 0.65 0.3 (T = 125 C) C 0.7 0.35 (I = 4.5 Adc, I = 0.9 Adc) C B 0.8 0.4 (T = 125 C) C DC Current Gain (I = 1.0 Adc, V = 5.0 Vdc) h 14 34 C CE FE (T = 125 C) 28 C DC Current Gain (I = 4.5 Adc, V = 1.0 Vdc) 6.0 9.0 C CE (T = 125 C) 5.0 8.0 C DC Current Gain (I = 2.0 Adc, V = 1.0 Vdc) 11 15 C CE (T = 125 C) 11 16 C DC Current Gain (I = 10 mAdc, V = 5.0 Vdc) 10 20 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz) f 13 MHz C CE T Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 100 150 pF CB E ob Input Capacitance (V = 8.0 V) C 1750 2500 pF EB ib Dynamic Saturation Voltage: V 5.5 Vdc CE(dsat) 1.0 s (I = 2.0 Adc C (T = 125C) 11.5 C I = 200 mAdc Determined 1.0 s and B1 3.5 V = 300 V) 3.0 s respectively after CC 3.0 s (T = 125C) 6.5 C rising I reaches 90% of B1 final I 11.5 B1 1.0 s (I = 5.0 Adc (see Figure 18) C (T = 125C) 14.5 C I = 1.0 Adc B1 2.4 V = 300 V) CC 3.0 s (T = 125C) 9.0 C SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) TurnOn Time (I = 2.0 Adc, I = 0.2 Adc, t 200 300 ns C B1 on I = 1.0 Adc, V = 300 V) (T = 125C) 190 C B2 CC TurnOff Time t 1.2 2.5 s off (T = 125C) 1.5 C TurnOn Time t 100 180 ns (I = 4.5 Adc, I = 0.9 Adc, C B1 on I = 2.25 Adc, V = 300 V) (T = 125C) 250 C B2 CC TurnOff Time t 1.6 2.5 s off (T = 125C) 2.0 C SWITCHING CHARACTERISTICS: Inductive Load (V = 300 V, V = 15 V, L = 200 H) clamp CC Fall Time (I = 2.0 Adc, I = 0.2 Adc, t 100 180 ns C B1 fi (T = 125C) 120 I = 1.0 Adc) B2 C Storage Time t 1.5 2.75 s si (T = 125C) 1.9 C Crossover Time t 250 350 ns c (T = 125C) 230 C Fall Time (I = 4.5 Adc, I = 0.9 Adc, t 85 150 ns C B1 fi I = 2.25 Adc) (T = 125C) 135 C B2 Storage Time t 2.0 3.2 s si (T = 125C) 2.6 C Crossover Time t 210 300 ns c (T = 125C) 250 C 3. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. 4. Proper strike and creepage distance must be provided. www.onsemi.com 2