Surface Mount Schottky Barrier Rectifiers 1 A, 30 V - 60 V SS13HE, NRVBSS13HE Series www.onsemi.com Features Very Low Profile Typical Height of 0.68 mm Low Power Loss, High Efficiency 1 2 Moisture Sensitivity Level 1 per JSTD020 Cathode Anode UL Flammability 94V0 Classification RoHS Compliant / Green Molding Compound NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOD323EP CASE 477AD MARKING DIAGRAM &Y &Z**&G Band Indicates Cathode &Y = Binary Calendar Year Coding Scheme &Z = Assembly Plant Code ** = Specific Device Code &G = Single Digit Weekly Data Code ORDERING INFORMATION Part Number Device Code Marking Package Shipping Method SS13HE 1A SOD323HE 3000 / Tape and Reel SS14HE 1B SOD323HE 3000 / Tape and Reel SASS14HE 1B SOD323HE 3000 / Tape and Reel SS16HE 1C SOD323HE 3000 / Tape and Reel NRVBSS13HE 1A SOD323HE 3000 / Tape and Reel NRVBSS14HE 1B SOD323HE 3000 / Tape and Reel NRVBSS16HE 1C SOD323HE 3000 / Tape and Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2021 Rev. 4 SS13HE/DSS13HE, NRVBSS13HE Series Table 1. ABSOLUTE MAXIMUM RATINGS Values are at T = 25C unless otherwise noted. A Value SS14HE, SS13HE SASS14HE SS16HE Symbol Parameter Unit V Maximum Repetitive Peak Reverse Voltage 30 40 60 V RRM V Reverse Voltage 30 40 60 V R I Maximum Average Forward Rectified Current 1 A F(AV) I Peak Forward Surge Current: 8.3 ms Single Half 25 A FSM SineWave Superimposed on Rated Load T Operating Junction Temperature Range 55 to +150 C J T Storage Temperature Range 55 to +150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 2. THERMAL CHARACTERISTICS (Note 1) Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit JunctiontoLead Thermal Resistance Thermocouple Soldered to Cathode 21 C/W JL R JunctiontoAmbient Thermal Resistance (Note 1) 199 C/W JA 1. Per JESD513 Recommended Thermal Test Board. Device mounted on FR4 PCB, board size = 76.2 mm x 114.3 mm Table 3. ELECTRICAL CHARACTERISTICS Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min Typ Max Unit V Instantaneous Forward I = 0.5 A, T = 25C SS13HE, 0.41 V F F J Voltage (Note 2) SS14HE, I = 0.5 A, T = 125C 0.31 F J SASS14HE I = 1.0 A, T = 25C 0.46 0.55 F J I = 1.0 A, T = 125C 0.40 0.50 F J I = 0.5 A, T = 25C SS16HE 0.51 F J I = 0.5 A, T = 125C 0.45 F J I = 1.0 A, T = 25C 0.61 0.68 F J I = 1.0 A, T = 125C 0.54 0.60 F J I Reverse Current at Rated V SS13HE, T = 25C 5.0 50 A R R J SS14HE, T = 125C 3.0 10 mA SASS14HE J T = 25C SS16HE 2.0 50 A J T = 125C 1.5 10 mA J T Reverse Recovery Time I = 0.5 A, I = 1.0 A, SS13HE, 5.6 ns rr F R I = 0.25 A SS14HE, rr SASS14HE SS16HE 8.3 C Junction Capacitance V = 4.0 V, f = 1 MHz SS13HE, 55 pF J R SS14HE, SASS14HE SS16HE 43 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 s, 1% duty cycle www.onsemi.com 2