SS33 ON Semiconductor

DATA SHEET www.onsemi.com Schottky Rectifier 1 2 SS32 - S310 Cathode Anode Description The SS32S310 series includes a highefficiency, low power loss, generalpropose Schottky rectifiers. The clipbonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polarity protection applications. SMC CASE 403AG Features Metal to Silicon Rectifiers, Majority Carrier Conduction MARKING DIAGRAM LowForward Voltage Drop Easy Pick and Place HighSurge Current Capability Y&Z&3 Sxyz This Device is PbFree and Halide Free Y = Logo &Z = Assembly Plant Code &3 = Date Code Sxyz = Specific Device Code x = S or 3 y = 1 or 3 z = 0 or 29 ORDERING INFORMATION Device Package Shipping SS32 SMC 3000 / SS33 (PbFree, Tape & Reel SS34 HalideFree) SS35 SS36 SS38 SS39 S310 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1999 1 Publication Order Number: August, 2021 Rev. 5 SS39/DSS32 S310 ABSOLUTE MAXIMUM RATINGS Values are at T = 25C unless otherwise noted. A Value SS32 SS33 SS34 SS35 SS36 SS38 SS39 S310 Symbol Parameter Units V Maximum Repetitive Reverse Voltage 20 30 40 50 60 80 90 100 V RRM I Maximum Average Forward Current 3.0 A F(AV) at T = 75C A I NonRepetitive Peak Forward Surge Current: 100 A FSM 8.3 ms Single HalfSine Wave dV/dt Maximum Voltage Rate of Change 10000 V/ S T Storage Temperature Range 55 to +150 C STG T Operating Junction Temperature 55 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit P Power Dissipation 2.27 W D R Thermal Resistance, Junction to Ambient (Note 1) 55 C/W JA R Thermal Resistance, Junction to Lead 17 C/W JL 1. Device mounted on FE4 PCB 0.55 x 0.55 inch (14 x 14 mm). ELECTRICAL CHARACTERISTICS Values are at T = 25C unless otherwise noted. A Value SS32 SS33 SS34 SS35 SS36 SS38 SS39 S310 Symbol Parameter Test Conditions Units V Forwarded Voltage I = 3.0 A 500 750 850 mV F F I Reverse Current at Rated V T = 25C 0.5 mA R R A T = 100C 20 10 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 100 3 80 2 60 40 1 Resistive or Inductive Load P.C.B. Mounted on 0.55 x 0.55 20 (14 x 14) mm Copper Pad Areas 0 0 0 25 50 75 100 125 150 175 1 2 5 10 20 50 100 Ambient Temperature ( C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. NonRepetitive Surge Current www.onsemi.com 2 I , Average Rectified Forward F Current (A) I , Peak Forward Surge FSM Current (A)