STK534U342C-E Intelligent Power Module (IPM) 600 V, 5 A Overview This Inverter IPM is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In www.onsemi.com line Package). Output stage uses IGBT/FRD technology and implements Under Voltage Protection (UVP). Internal Boost diodes are provided for high side gate boost drive. Function Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit All control input and status output are at low voltage levels directly compatible with microcontrollers. Built-in cross conduction prevention. Externally accessible embedded thermistor for substrate temperature measurement Certification UL1557 (File number: E339285) Specifications Absolute Maximum Ratings at Tc = 25C Parameter Symbol Remarks Ratings Unit V Supply voltage P to U-, V-, W-, surge < 500 V *1 450 V CC V Collector-emitter voltage P to U, V, W or U, V, W, to U-, V-, W- 600 V CE P,U-,V-,W-,U,V,W terminal current 5 A Output current Io 3 A P,U-,V-,W-,U,V,W terminal current, Tc = 100 C Output peak current Iop P,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms 10 A VB1 to U, VB2 to V, VB3 to W, V to V *2 Pre-driver voltage VD1,2,3,4 20 V DD SS V 0.3 to V Input signal voltage HIN1, 2, 3, LIN1, 2, 3 V IN DD FLTEN terminal voltage VFLTEN FLTEN terminal 0.3 to V V DD Maximum power dissipation Pd IGBT per 1 channel 27.7 W Junction temperature Tj IGBT, FRD, Pre-Driver IC 150 C Storage temperature Tstg 40 to +125 C Operating case temperature Tc IPM case 20 to +100 C Tightening torque A screw part *3 0.9 Nm Withstand voltage Vis 50 Hz sine wave AC 1 minute *4 2000 VRMS Reference voltage is V terminal voltage unless otherwise specified. SS *1: Surge voltage developed by the switching operation due to the wiring inductance between P and U-(V-, W-) terminal. *2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = V to V . DD SS *3: Flatness of the heat-sink should be 0.15 mm and below. *4: Test conditions : AC 2500 V, 1 s. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 15 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : September 2016 - Rev. 1 STK534U342C-E/D STK534U342C-E Electrical Characteristics at Tc = 25 C, VD1, VD2, VD3, VD4 = 15 V Test Parameter Symbol Conditions MIN TYP MAX Unit circuit Power output section Collector-emitter cut-off current I V = 600 V - - 100 A CE CE Fig.1 Bootstrap diode reverse current IR(BD) VR(BD) = 600 V - - 100 A Collector to emitter saturation voltage Io = 5 A, Tj = 25C - 1.6 2.4 V (SAT) Fig.2 V CE Io = 3 A, Tj = 100C 1.4 - Io = 5 A, Tj = 25 C - 1.2 1.8 Diode forward voltage VF Fig.3 V Io = 3 A, Tj = 100 C 1.0 - j-c(T) IGBT - - 4.5 Junction to case thermal resistance - C /W j-c(D) FWD - - 6 Control (Pre-driver) section VD1,2,3 = 15 V - 0.08 0.4 Pre-driver power dissipation ID Fig.4 mA VD4 = 15 V - 1.6 4 High level Input voltage Vin H - 2.5 - - V HIN1,HIN2,HIN3, Low level Input voltage Vin L LIN1,LIN2,LIN3 to V - - - 0.8 V SS Logic 1 input leakage current I VIN = +3.3 V - - 100 143 A IN+ Logic 0 input leakage current I VIN = 0 V - - - 2 A IN- FLTEN terminal sink current IoSD FAULT:ON / VFLTEN=0.1 V - - 2 - mA From time fault condition FLTEN clearance delay time FLTCLR - 1.0 2.0 3.0 ms clear VEN+ VEN rising - - - 2.5 V FLTEN Threshold VEN- VEN falling - 0.8 - - V ITRIP threshold voltage VITRIP ITRIP(16) to V (29) - 0.44 0.49 0.54 V SS ITRIP to shutdown propagation delay t - 340 550 800 ns ITRIP ITRIP blanking time t - 250 350 - ns ITRIPBL V CCUV+ V and V supply undervoltage protection reset - 10.5 11.1 11.7 V CC BS V BSUV+ V CCUV- V and V supply undervoltage protection set - 10.3 10.9 11.5 V CC BS V BSUV- V CCUVH V and V supply undervoltage hysteresis - 0.14 0.2 - V CC BS V BSUVH Reference voltage is V terminal voltage unless otherwise specified. SS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2