Ordering number : ENA0754A STK672-540 Thick-Film Hybrid IC STK672-540 Specifications Absolute Maximum Ratings at Tc = 25C Parameter Symbol Conditions Ratings unit Maximum supply voltage 1 V max No signal 52 V CC Maximum supply voltage 2 V max No signal -0.3 to +7.0 V DD Input voltage V max Logic input pins -0.3 to +7.0 V IN Output current 1 I max 10A 1 pulse (resistance load) 10 A OP Output current 2 I max V =5V, CLOCK200Hz 4A OH DD Allowable power dissipation Pd max With an arbitrarily large heat sink. Per MOSFET 13.3 W Operating substrate temperature Tc max 105 C Junction temperature Tj max 150 C Storage temperature Tstg -40 to +125 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Allowable Operating Ranges at Ta=25C Parameter Symbol Conditions Ratings unit Operating supply voltage 1 V With signals applied 10 to 42 V CC Operating supply voltage 2 V With signals applied 55% V DD Input high voltage V Pins 8, 9, 10, 11, 12 2.5 to V V IH DD Input low voltage V Pins 8, 9, 10, 11, 12 0 to 0.6 V IL Output current 1 I1 Tc=105C, CLOCK200Hz, OH 3.0 A Continuous operation, duty=100% Output current 2 I2 Tc=80C, CLOCK200Hz, OH Continuous operation, duty=100%, 3.3 A See the motor current (I ) derating curve OH CLOCK frequency f Minimum pulse width: at least 10s 0 to 50 kHz CL Phase driver withstand voltage V I =1mA (Tc=25C) 100min V DSS D Recommended operating Tc No condensation 0 to 105 C substrate temperature Recommended Vref range Vref Tc=105C 0.14 to 1.62 V Refer to the graph for each conduction-period tolerance range for the output current and brake current. Electrical Characteristics at Tc=25C, V =24V, V =5.0V CC DD Parameter Symbol Conditions min typ max unit V supply current I Pin 6 current CLOCK=GND 3.1 7mA DD CCO Output average current Ioave R/L=3/3.8mH in each phase 0.52 0.58 0.64 A FET diode forward voltage Vdf If=1A (R =23) 1.0 1.6 V L Output saturation voltage Vsat R =23 0.28 0.40 V L Input high voltage V Pins 8, 9, 10, 11, 12 2.5 V IH Input low voltage V Pins 8, 9, 10, 11, 12 0.6 V IL Input leak current I Pins 8, 9, 10, 11, 12=GND and 5V 10 A IL Vref input bias current I Pin 7 =1.0V 204 216 A IB PWM frequency fc 35 45 55kHz Notes: A fixed-voltage power supply must be used. No. A0754-2/22