DF3A6.8FUT1 Preferred Device Zener ESD Protection Diode Dual Common Anode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for www.onsemi.com applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, 1 3 medical equipment and other applications. Their dual junction common 2 anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features MARKING PbFree Package is Available DIAGRAM SC70 Package Allows Two Separate Unidirectional Configurations 1 Low Leakage < 1.0 A 5.0 V 2 Breakdown Voltage: 6.47.2 V 5.0 mA 68 SC70/SOT323 ESD Protection Meeting:16 kV Human Body Model CASE 419 30 kV Contact = IEC6100042 STYLE 4 Peak Power: 24 W 1.0 ms (Unidirectional), per Figure 1 68 = Specific Device Code Peak Power: 150 W 20 s (Unidirectional), per Figure 2 M = Date Code Mechanical Characteristics Void Free, TransferMolded, Thermosetting Plastic Case ORDERING INFORMATION Corrosion Resistant Finish, Easily Solderable Device Package Shipping Package Designed for Optimal Automated Board Assembly DF3A6.8FUT1 SC70 3000/Tape & Reel Small Package Size for High Density Applications DF3A6.8FUT1G SC70 3000/Tape & Reel MAXIMUM RATINGS (PbFree) Rating Symbol Value Unit For information on tape and reel specifications, Steady State Power Dissipation P 200 mW including part orientation and tape sizes, please D Derate above 25C (Note 1) 1.6 mW/C refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Thermal Resistance JunctiontoAmbient 618 C/W R JA Operating Junction and Storage T , T 55 to C J stg Preferred devices are recommended choices for future use Temperature Range +150 and best overall value. Peak Power Dissipation 1.0 ms P 20 W PK (Note 2) T = 25C A P 150 W Peak Power Dissipation 20 s (Note 3) PK T = 25C A ESD Discharge V kV PP MIL STD 883C Method 30156 16 IEC6100042, Air Discharge 30 IEC6100042, Contact Discharge 30 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted on FR5 Board = 1.0 X 0.75 X 0.062 in. 2. Nonrepetitive pulse per Figure 1. 3. Nonrepetitive pulse per Figure 2. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: August, 2017 Rev. 2 DF3A6.8FUT1/D MDF3A6.8FUT1 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) F Symbol Parameter V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V V V C BR RWM V I V Breakdown Voltage I V BR T R F I T I Test Current T I Forward Current F V Forward Voltage I F F I PP Z Maximum Zener Impedance I ZT ZT Z Maximum Zener Impedance I ZK ZK UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol Conditions Min Typ Max Unit Forward Voltage V I = 10 mA 0.8 0.9 V F F Zener Voltage (Note 4) V I = 5 mA 6.4 6.8 7.2 V Z ZT Operating Resistance (Note 5) Z I = 0.5 mA 200 ZK ZK Z I = 5 mA 50 ZT ZT Reverse Current I V = 5 V 0.5 A R1 RWM Clamping Voltage V I = 2.0 A (Figure 1) 9.6 V C PP I = 9.37 A (Figure 2) PP 16 V ESD Protection kV Human Body Model (HBM) 16 Contact IEC6100042 30 Air Discharge 30 4. V measured at pulse test current I at an ambient temperature of 25C. Z ZT 5. Z and Z is measured by dividing the AC voltage drop across the device by the AC current supplied. AC frequency = 1.0 kHz. ZT ZK www.onsemi.com 2