ESD9R3.3S, SZESD9R3.3S ESD Protection Diode UltraLow Capacitance The ESD9R is designed to provide ESD protection for ASSPs and ASICs used in ultra low current applications such as human body sensors. These devices have been designed for leakage under 1 nA www.onsemi.com from 0C to 50C when turned off. During an ESD event, these devices turn on to clamp the ESD to a safe voltage level for the IC. These devices have the added benefits of low capacitance for high speed data lines and small package size for space constrained designs. Specification Features: UltraLow Leakage < 1 nA UltraLow Capacitance 0.5 pF Low Clamping Voltage Small Body Outline Dimensions: 0.039 x 0.024 (1.00 mm x 0.60 mm) SOD923 CASE 514AB Low Body Height: 0.016 (0.4 mm) Standoff Voltage: 3.3 V Response Time < 1.0 ns MARKING DIAGRAM IEC6100042 Level 4 ESD Protection SZ Prefix for Automotive and Other Applications Requiring Unique J M Site and Control Change Requirements AECQ101 Qualified and PPAP Capable This is a PbFree and HalogenFree Device J = Specific Device Code M = Date Code Mechanical Characteristics: *Date Code orientation and/or position may CASE: Void-free, transfer-molded, thermosetting plastic vary depending upon manufacturing location. Epoxy Meets UL 94 V0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any ORDERING INFORMATION QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Package Shipping Device Meets MSL 1 Requirements ESD9R3.3ST5G SOD923 8000 / Tape & MAXIMUM RATINGS (PbFree) Reel Rating Symbol Value Unit SZESD9R3.3ST5G SOD923 8000 / Tape & (PbFree) Reel IEC 6100042 (ESD) Contact 10 kV Air 15 For information on tape and reel specifications, HBM 16 including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Total Power Dissipation on FR5 Board P 150 mW D Brochure, BRD8011/D. (Note 1) T = 25C A Storage Temperature Range T 55 to +150 C stg Junction Temperature Range T 55 to +125 C J DEVICE MARKING INFORMATION Lead Solder Temperature Maximum T 260 C L See specific marking information in the device marking (10 Second Duration) column of the Electrical Characteristics tables starting on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2017 Rev. 2 ESD9R3.3S/DESD9R3.3S, SZESD9R3.3S ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional C Max. Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.0 V Max. I = 10 mA for all types) A F F I (nA) 1 V R V (V) T = 0 C C A V V (V) I I = 1 A to 50 C RWM BR T PP (V) (Note 2) (Note 5) (Note 4) I C (pF) V T C Per IEC6100042 Device (Note 3) Marking Max Max Min mA Typ Max Max Device* ESD9R3.3ST5G J** 3.3 1.0 4.8 1.0 0.5 0.9 7.8 Figures 1 and 2 See Below *Includes SZprefix device where applicable. **Rotated 270. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. Limits over temperature are guaranteed by design, not production tested. 5. V measured using pulse waveform in Figure 5. C Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2