Ordering number : ENA1023 TND512MD SANYO Semiconductors DATA SHEET ExPD(Excellent-Performance Power & RF Device) TND512MD 3-phase Motor Drive Application Features 3-phase high side driver. Monolithic structure. Allows simplified configuration of driver circuit. Withstand voltage of 600V is assured. Fully compatible input to LSTTL/CMOS. High-speed switching. Output current : 170mA Source, 340mA Sink. Specifications Absolute Maximum Ratings at Ta=25C (All voltage parameters are absolute voltage referenced to GND) Parameter Symbol Conditions Ratings Unit High Side Floating Supply Voltage V --0.3 to 625 V H High Side Floating Supply Offset Voltage V V --25 to V +0.3 V FG H H High Side Output Voltage V V --0.3 to V +0.3 V OUT FG H Logic Supply Voltage V --0.3 to 25 V DD Logic Input Voltage(UIN, VIN, WIN) V --0.3 to V +0.3 V IN DD 2 Allowable Power Dissipation P When mounted on ceramic substrate (250mm0.8mm) 0.9 W D Junction Temperature Tj --55 to +150 C Storage Temperature Tstg --55 to +150 C Recommended Operating Conditions at Ta=25C Parameter Symbol Conditions Ratings Unit High Side Floating Supply Voltage V V +10 to V +20 V H FG FG High Side Floating Supply Offset Voltage V 0 to 600 V FG High Side Output Voltage V V to V V OUT FG H Logic Supply Voltage V +10 to +20 V DD Logic Input Voltage(UIN, VIN, WIN) V 0 to V V IN DD Ambient Temperature Topr --40 to +125 C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to standard applicatio, intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for anyspecial applicatio (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13008IP TI IM TC-00001142 No. A1023-1/8TND512MD AC Characteristics at Ta=25C (V =V -V =15V, C =1000pF) DD H FG L Ratings Parameter Symbol Conditions Unit min typ max Turn-ON Delay Time t V =0V 155 ns on FG Turn-OFF Delay Time t V =600V 135 ns off FG Turn-ON Rise Time t 110 ns r Turn-OFF Fall Time t 40 ns f Turn-ON Delay Matching of U, V and W * Mt t --t , t --t , t --t 30 ns on onu onv onv onw onw onu Turn-OFF Delay Matching of U, V and W * Mt t --t , t --t , t --t 30 ns off offu offv offv offw offw offu DC Characteristics at Ta=25C (V =V -V =15V) DD H FG Ratings Parameter Symbol Conditions Unit min typ max Logic 1 Input Voltage V V =10 to 20V 3.0 V IH DD Logic 0 Input Voltage V V =10 to 20V 0.8 V IL DD High-level Output Voltage, VBIAS-V V V =V , I =0A 0.1 V O OH IN IH O Low-level Output Voltage, V V V =V , I =0A 0.1 V O OL IN IL O Offset Supply Leakage Current I V =V =600V 10 A LK H FG Quiescent V Supply Current I V =0V or V 50 100 A H QH IN DD Quiescent V Supply Current I V =0V or V 140 230 A DD QDD IN DD Logic 1 Input Bias Current I+V =V 20 55 A IN IN DD Logic 0 Input Bias Current I -- V =0V 1 A IN IN V Supply Undervoltage H V + HUV 7.6 8.9 9.9 V Positive Going Threshold V Supply Undervoltage H V -- HUV 6.7 8.1 9.5 V Negative Going Threshold V Supply Undervoltage DD V + DDUV 7.6 8.9 9.9 V Positive Going Threshold V Supply Undervoltage DD V -- DDUV 6.7 8.1 9.5 V Negative Going Threshold Output High Short Circuit Pulsed Current I+V =0V, V =15V, PW 10s 170 200 mA O OUT IN Output Low Short Circuit Pulsed Current I -- V =15V, V =0V, PW 10s 340 400 mA O OUT IN Package Dimensions unit : mm (typ) 7050A-002 10.0 0.15 16 9 1 : No Contact 9 : WOUT 2 : VDD 10 : WFG 3 : UIN 11 : VFG 4 : VIN 12 : VOUT 18 5 : WIN 13 : VH (0.56) 1.27 0.35 6 : GND 14 : UFG 7 : No Contact 15 : UOUT 8 : WH 16 : UH SANYO : MFP16 No. A1023-2/8 1.7MAX 6.4 (1.5) 4.4 0.1 0.63