UESD3.3DT5G ON Semiconductor

ESD3.3DT5G SERIES ESD Protection Diodes Ultra Small SOT723 Package The ESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in www.onsemi.com cellular phones, portable devices, digital cameras, power supplies and many other portable applications. 1 PIN 1. CATHODE Specification Features: 3 2. CATHODE 3. ANODE 2 Small Body Outline Dimensions: 0.047 x 0.032 (1.20 mm x 0.80 mm) Low Body Height: 0.020 (0.5 mm) Standoff Voltage: 3.3 V 6.0 V MARKING Low Leakage DIAGRAM 3 Response Time is Typically < 1 ns 2 ESD Rating of Class 3 (> 16 kV) per Human Body Model 1 xx M IEC6100042 Level 4 ESD Protection SOT723 IEC6100044 Level 4 EFT Protection CASE 631AA STYLE 4 AECQ101 Qualified and PPAP Capable xx = Device Code M = Date Code These are PbFree Devices Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic ORDERING INFORMATION Epoxy Meets UL 94 V0 LEAD FINISH: 100% Matte Sn (Tin) Device Package Shipping MOUNTING POSITION: Any UESDxxDT5G SOT723 8000/Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications MAXIMUM RATINGS Brochure, BRD8011/D. Rating Symbol Value Unit IEC 6100042 (ESD) Air 30 kV Contact 30 DEVICE MARKING INFORMATION See specific marking information in the device marking IEC 6100044 (EFT) 40 A column of the table on page 2 of this data sheet. ESD Voltage Per Human Body Model 16 kV V Per Machine Model 400 Total Power Dissipation on FR5 Board mW (Note 1) T = 25C P 240 A D mW/C Derate above 25C 1.9 C/W Thermal Resistance JunctiontoAmbient R 525 JA Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2017 Rev. 5 UESD3.3DT5G/D ESD3.3DT5G SERIES ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V V V V C BR RWM R RWM V I V R F V Breakdown Voltage I BR T I T I Test Current T I Forward Current F V Forward Voltage I F F P Peak Power Dissipation pk I PP C Max. Capacitance V = 0 and f = 1 MHz R UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.1 V Max. I = 10 mA for all types) A F F V (V) I BR T (Note 2) V (V) I ( A) V I C (pF) RWM R RWM T Device Marking Max Max Min mA Typ Device* UESD3.3DT5G L0 3.3 1.0 5.0 1.0 47 UESD5.0DT5G L2 5.0 0.1 6.2 1.0 38 UESD6.0DT5G L3 6.0 0.1 7.0 1.0 34 *Other voltages available upon request. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T www.onsemi.com 2