Z0103MA Sensitive Gate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92 package which is readily adaptable for use in Z0103MA THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 50 C/W JC Thermal Resistance, JunctiontoAmbient R 160 C/W JA Maximum Lead Temperature for Soldering Purposes for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current T = 25C I , I 5.0 A J DRM RRM (V = Rated V , V Gate Open) T = +125C 500 D DRM RRM J ON CHARACTERISTICS Peak OnState Voltage V 1.56 V TM (I = 1.4 A Peak Pulse Width 2.0 ms, Duty Cycle 2.0%) TM Gate Trigger Current (Continuous dc) I mA GT (V = 12 Vdc, R = 30 ) D L MT2(+), G(+) 0.15 3.0 0.15 3.0 MT2(+), G() MT2(), G() 0.15 3.0 MT2(), G(+) 0.25 5.0 Latching Current (V = 12 V, I = 1.2 x I ) I mA D G GT L MT2(+), G(+) All Types 7.0 MT2(+), G() All Types 15 MT2(), G() All Types 7.0 MT2(), G(+) All Types 7.0 Gate Trigger Voltage (Continuous dc) V V GT (V = 12 Vdc, R = 30 ) D L MT2(+), G(+) All Types 1.3 MT2(+), G() All Types 1.3 MT2(), G() All Types 1.3 MT2(), G(+) All Types 1.3 Gate NonTrigger Voltage V 0.2 1.3 V GD (V = 12 V, R = 30 , T = 125C) D L J All Four Quadrants Holding Current I 7.0 mA H (V = 12 Vdc, Initiating Current = 50 mA, Gate Open) D DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current di/dt(c) 1.6 A/ms (V = 400 V, I = 0.84 A, Commutating dv/dt = 1.5 V/ s, Gate Open, D TM T = 110C, f = 250 Hz, with Snubber) J Critical Rate of Rise of OffState Voltage (V = 67% Rated V , dv/dt V/ s D DRM Exponential Waveform, Gate Open, T = 110C) 10 30 J Repetitive Critical Rate of Rise of OnState Current, T = 125C di/dt 20 A/ s J Pulse Width = 20 s, IPK = 15 A, diG/dt = 1 A/ s, f = 60 Hz max