AXUVHS11 Opto Diode

From Deep UV to Mid-IR 2 AXUVHS11 Photodiode 0.60 mm An ITW Company FEATURES SMA Connector Ideal for Electron Detection Ultra-High Speed Electro-Optical Characteristics at 25C Parameters Test Conditions Min Typ Max Units 2 Active Area 0.60 mm 0.28 mm Responsivity (see graphs on next page) Reverse Breakdown Voltage, V I = 1 A 55 Volts R R Capacitance, C V = 0 V 20 60 pF R Response Time V = 52 V 700 psec R Dark Current V = 52 V 10 nA R Thermal Parameters Units Storage and Operating Temperature Range 1 Ambient -10C to 40C Nitrogen or Vacuum -20C to 80C Lead Soldering Temperature N/A 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150 nm will be compromised. Maximum torque of 5 inch/pounds recommended. Permanent damage will result if higher torque values are used and warranty is voided. Revision November 26, 2019 Page 1 of 4 From Deep UV to Mid-IR 2 AXUVHS11 Photodiode 0.60 mm An ITW Company Typical Electron Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) Typical EUV-UV Photon Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 50 100 150 200 250 WAVELENGTH (nm) Typical UV-VIS-NIR Photon Responsivity 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) Revision November 26, 2019 Page 2 of 4 RESPONSIVITY (A/W) RESPONSIVITY (A/W) RESPONSIVITY (A/W)