X-On Electronics has gained recognition as a prominent supplier of ODD-42WB Photodiodes across the USA, India, Europe, Australia, and various other global locations. ODD-42WB Photodiodes are a product manufactured by Opto Diode. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

ODD-42WB Opto Diode

ODD-42WB electronic component of Opto Diode
ODD-42WB Opto Diode
ODD-42WB Photodiodes
ODD-42WB  Optoelectronics

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See Product Specifications
Part No. ODD-42WB
Manufacturer: Opto Diode
Category: Photodiodes
Description: PHOTODIODE LOCAP 42MM 450NM TO-8
Datasheet: ODD-42WB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 54.3917 ea
Line Total: USD 54.39 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 1
Multiples : 1
1 : USD 54.3917
10 : USD 40.7895
80 : USD 38.7503

   
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RoHS - XON
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We are delighted to provide the ODD-42WB from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ODD-42WB and other electronic components in the Photodiodes category and beyond.

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From Deep UV to Mid-IR 2 ODD-42WB Photodiode 42 mm An ITW Company FEATURES TO-8 Hermetic Package Optimized Die Size for Maximum Signal Low Capacitance Electro-Optical Characteristics at 25C Parameters Test Conditions Min Typ Max Units 2 Active Area 9.91 mm x 4.28 mm 42 mm Responsivity @ 450 nm 0.2 0.28 A/W Dark Current, Idr V = 10 V 11 25 nA R Reverse Breakdown Voltage, V I = 10 A 25 60 Volts R R Capacitance, C V = 10 V 85 pF R Rise Time V = 10 V 30 nsec R Series Resistance V = 1 V 35 100 Ohms f Thermal Parameters Units Parameters Storage and Operating Temperature Range -55C to 100C Maximum Junction Temperature 100C 1 Lead Soldering Temperature 260C 1 1/16" from case for 10 seconds. Revision May 25, 2018 Page 1 of 3 From Deep UV to Mid-IR 2 ODD-42WB Photodiode 42 mm An ITW Company Capacitance vs Bias Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 02468 10 12 14 16 18 20 BIAS VOLTAGE (V) Typical Spectral Response 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) Dark Current vs Voltage 3.0 2.5 2.0 1.5 1.0 0.5 0.0 05 10 15 20 25 30 35 40 45 50 55 60 REVERSE VOLTAGE (Vr) Revision May 25, 2018 Page 2 of 3 RELATIVE DARK CURRENT (ld) RESPONSIVITY RELATIVE CAPACITANCE

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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