From Deep UV to Mid-IR ODD-8SMD Surface Mount Photodiode An ITW Company FEATURES High Sensitivity Low Capacitance Short Switching Time Surface Mount Package Electro-Optical Characteristics at 25C Parameters Test Conditions Min Typ Max Units Range of Spectral Bandwidth, 400 1100 nm 0.5 Wavelength of Peak Sensitivity, 940 nm P Responsivity = 940 nm 0.44 A/W P Reverse Dark Current, I V = 10 V 5 nA P R Reverse Breakdown Voltage, B I = 100 A 32 170 Volts VR R Total Capacitance, C V = 3 V, f = 1 MHz 25 pF t R Rise/Fall Time, t /t V = 10 V, RL = 1 K 50/50 nsec r f R Thermal Parameters Units Parameters Operating Temperature Range -25C to +85C Storage Temperature Range -40C to +85C Power Dissipation at (or below) 25C Free Air Temperature 150 mW 1 Soldering Temperature (soldering time 5 sec max) 260C Note: Minimum direct order quantity 10,000 pieces. Revision January 15, 2019 Page 1 of 5 From Deep UV to Mid-IR ODD-8SMD Surface Mount Photodiode An ITW Company Spectral Sensitivity 1.0 Ta = 25C 0.8 0.6 0.4 0.2 0.0 100 300 500 700 900 1100 1300 WAVELENGTH (nm) Dark Current vs Ambient Temperature 1000 V = 10 V R 100 10 1 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) Terminal Capacitance vs Reverse Voltage 80 f = 1 MHz V = 3 V R 60 2 Ee = 0 mW/cm 40 20 0 0.1 1 10 100 REVERSE VOLTAGE (V) Revision January 15, 2019 Page 2 of 5 RELATIVE SPECTRAL REVERSE DARK CURRENT (nA) SENSITIVIY RTERMINAL CAPACITANCE (pF)