From Deep UV to Mid-IR AXUV20HS1 Photodiode 5 mm An ITW Company FEATURES Circular Active Area Ideal for EUV Detection High Speed Grid Lines 5 Microns, Pitch 100 Microns 3 Protective Cover Plate Electro-Optical Characteristics at 25 C Parameters Test Conditions Min Typ Max Units 2 Active Area 5.01 mm 20 mm Responsivity (see graph on next page) A/W Reverse Breakdown Voltage, V I = 1 A 160 Volts R R Capacitance, C V = 0 V 300 900 pF R Rise Time R = 50 , V = 150 V 3.5 nsec L R Dark Current V = 150 V 100 nA R Thermal Parameters Units Storage and Operating Temperature Range 1 Ambient -10 to 40 C Nitrogen or Vacuum -20 C to 80 C 2 Lead Soldering Temperature 260 C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150 nm will be compromised. 2 0.080 from case for 10 seconds. 3 Shipped with temporary cover to protect the photodiode array and wire bonds. Review the Application Note, Handling Precautions for AXUV, SXUV, and UVG Detectors, prior to removing cover. Revision October 17, 2019 Page 1 of 4 From Deep UV to Mid-IR AXUV20HS1 Photodiode 5 mm An ITW Company Typical Electron Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) Typical EUV-UV Photon Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 50 100 150 200 250 WAVELENGTH (nm) Typical UV-VIS-NIR Photon Responsivity 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) Revision October 17, 2019 Page 2 of 4 RESPONSIVITY (A/W) RESPONSIVITY (A/W) RESPONSIVITY (A/W)