X-On Electronics has gained recognition as a prominent supplier of AXUV576C Photodiodes across the USA, India, Europe, Australia, and various other global locations. AXUV576C Photodiodes are a product manufactured by Opto Diode. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

AXUV576C Opto Diode

AXUV576C electronic component of Opto Diode
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See Product Specifications
Part No.AXUV576C
Manufacturer: Opto Diode
Category: Photodiodes
Description: PHOTODIODE ELECTRON DET 576MM2
Datasheet: AXUV576C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1356.1317 ea
Line Total: USD 1356.13 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1356.1317

   
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RoHS - XON
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We are delighted to provide the AXUV576C from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AXUV576C and other electronic components in the Photodiodes category and beyond.

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From Deep UV to Mid-IR 2 AXUV576C Electron Detection 576 mm An ITW Company FEATURES Square Active Area Round 4-Pin Package Ideal for Electron Detection Electro-Optical Characteristics at 25 C Parameters Test Conditions Min Typ Max Units 2 Active Area 24.01 mm x 24.01 mm 576.5 mm Responsivity (see graphs on next page) Shunt Resistance, Rsh 10 mV 5 50 Reverse Breakdown Voltage, V I = 1 A 5 Volts R R Capacitance, C V = 0 V 5 15 nF R Rise Time, tr V = 10 V, R = 50 50 usec R L Thermal Parameters Units Storage and Operating Temperature Range 1 Ambient -10 to 40C Nitrogen or Vacuum -20C to 80C 2 Lead Soldering Temperature 260C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150 nm will be compromised. 2 0.080 from case for 10 seconds. Revision November 26, 2019 Page 1 of 4 From Deep UV to Mid-IR 2 AXUV576C Electron Detection 576 mm An ITW Company Typical Electron Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) Typical EUV-UV Photon Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 50 100 150 200 250 WAVELENGTH (nm) Typical UV-VIS-NIR Photon Responsivity 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) Revision November 26, 2019 Page 2 of 4 RESPONSIVITY (A/W) RESPONSIVITY (A/W) RESPONSIVITY (A/W)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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