AXUV63HS1 Opto Diode

From Deep UV to Mid-IR AXUV63HS1 Photodiode 9 mm An ITW Company FEATURES Circular Active Area Ideal for Electron Detection High Speed 3 Protective Cover Plate Electro-Optical Characteristics at 25C Parameters Test Conditions Min Typ Max Units 2 Active Area 9 mm 63 mm Responsivity (see graphs on next page) A/W Reverse Breakdown Voltage, V I = 1 A 160 Volts R R Capacitance, C V = 0 V 700 2000 pF R Rise Time R = 50 , V = 150 V 10 nsec L R Dark Current V = 150 V 100 nA R Thermal Parameters Units Storage and Operating Temperature Range 1 Ambient -10 to 40 C Nitrogen or Vacuum -20 C to 80 C 2 Lead Soldering Temperature 260 C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150 nm will be compromised. 2 0.080 from case for 10 seconds. 3 Shipped with temporary cover to protect the photodiode array and wire bonds. Review the Application Note, Handling Precautions for AXUV, SXUV, and UVG Detectors, prior to removing cover. Revision November 26, 2019 Page 1 of 4 From Deep UV to Mid-IR AXUV63HS1 Photodiode 9 mm An ITW Company Typical Electron Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) Typical EUV-UV Photon Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 50 100 150 200 250 WAVELENGTH (nm) Typical UV-VIS-NIR Photon Responsivity 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) Revision November 26, 2019 Page 2 of 4 RESPONSIVITY (A/W) RESPONSIVITY (A/W) RESPONSIVITY (A/W)