X-On Electronics has gained recognition as a prominent supplier of OSI3XNE3E1E Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. OSI3XNE3E1E Infrared Emitters - High Power are a product manufactured by Optosupply. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

OSI3XNE3E1E Optosupply

OSI3XNE3E1E electronic component of Optosupply
OSI3XNE3E1E Optosupply
OSI3XNE3E1E Infrared Emitters - High Power
OSI3XNE3E1E  Optoelectronics

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See Product Specifications
Part No. OSI3XNE3E1E
Manufacturer: Optosupply
Category: Infrared Emitters - High Power
Description: IR transmitter; 850nm; P opt:250mW; 140°; P:2W
Datasheet: OSI3XNE3E1E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.7262 ea
Line Total: USD 6.73 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 25 Apr to Tue. 29 Apr
MOQ : 1
Multiples : 1
1 : USD 6.7262
5 : USD 4.8987
6 : USD 3.5474
15 : USD 3.3477
100 : USD 3.3324

   
Manufacturer
Product Category
Wavelength
Type Of Diode
Power
Optical Power
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the OSI3XNE3E1E from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the OSI3XNE3E1E and other electronic components in the Infrared Emitters - High Power category and beyond.

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Xeon 3 Power 850nm Infrared Emitter LED Xeon 3 Power 850nm Emitter LED OSI3XNE3E1E VER C.0 Features Outline Dimension Highest luminous flux Super energy efficiency Very long operating life Superior ESD protection Applications Night Vision Anode Cathode Camera Unit:mm Tolerance:0.30mm Outdoor./Indoor applications Absolute Maximum Rating (Ta=25)))) Directivity Item Symbol Value Unit 0 DC Forward Current I 1000 mA F Pulse Forward Current* I 2000 mA FP Reverse Voltage V 5 V R Power Dissipation 0 P 2000 mW D Operating Temperature Topr -30 ~ +85 Storage Temperature Tstg -40~ +100 Lead Soldering Temperature Tsol 260/5sec - *Pulse width Max.10ms Duty ratio max 1/10 Electrical -Optical Characteristics (Ta=25)))) Forward Operating Current (DC) Item Symbol Condition Min. Typ. Max. Unit 1200 1000 DC Forward Voltage V I =700mA - 1.7 2.0 V F F Rth(J-a)=20/W 800 Rth(J-a)=30/W DC Reverse Current I V =5V - - 10 A R R 600 Rth(J-a)=40/W 400 Peak Wavelength I =700mA - 850 - nm P F 200 Radiant Power P I =700mA 200 250 - mW O F 0 0 20 40 60 80 100 50% Power Angle 21/2 I =700mA - 140 - deg Ambient Temperature, TA () F Note: Dont drive at rated current more than 5s without heat sink for Xeon 3 emitter series. LED & Application Technologies Forward Current, IF (mA)Xeon 3 Power 850nm Infrared Emitter LED Xeon 3 Power 850nm Emitter LED OSI3XNE3E1E VER C.0 Soldering Heat Reliability : Reflow soldering Profile Reflow soldering should not be done more than two times. When soldering, do not put stress on the LEDs during heating. After soldering, do not warp the circuit board. Repairing should not be done after the LEDs have been soldered. When repairing is unavoidable, a double-head soldering iron should be used. It should be confirmed beforehand whether the characteristics of the LEDs will or will not be damaged by repairing. Solder Average ramp-up rate = 3C/sec. max. Preheat temperature: 150~180C Preheat time = 120 sec. max. Ramp-down rate = 6C/sec. max. Peak temperature = 220C max. Time within 3C of actual peak temperature = 25 sec. max. Duration above 200C is 40 sec. max. LED & Application Technologies

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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