SFH 2700 Osram

www.osram-os.com Produktdatenblatt | Version 1.1 SFH 2700 SFH 2700 CHIPLED Silicon PIN Photodiode Applications Industrial Automation (Machine controls, Light barriers, Vision controls) Features: Package: clear epoxy ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM) Very small SMT package Especially suitable for applications from 300 nm to 1100 nm Ordering Information Type Photocurrent Photocurrent Ordering Code typ. E = 0.5 mW/cm; = 850 nm; V = 5 V E = 0.5 mW/cm; = 850 nm; V = 5 V e R e R I I P P SFH 2700 1.2 A 1.5 A Q65112A4435 1 Version 1.0 | 2018-06-13 SFH 2700 Maximum Ratings T = 25 C A Parameter Symbol Values Operating Temperature T min. -40 C op max. 100 C Storage temperature T min. -40 C stg max. 100 C Reverse voltage V max. 16 V R ESD withstand voltage V max. 2 kV ESD acc. to ANSI/ESDA/JEDEC JS-001 (HBM) Characteristics T = 25 C A Parameter Symbol Values Wavelength of max sensitivity typ. 890 nm S max Spectral range of sensitivity typ. 300 ... 1100 10% nm Radiant sensitive area A typ. 0.35 mm Dimensions of active chip area L x W typ. 0.59 x 0.59 mm x mm Half angle typ. 70 Dark current I typ. 0.045 nA R V = 5 V max. 5 nA R Open-circuit voltage V min. 290 mV O E = 0.5 mW/cm; = 850 nm typ. 300 mV e Short-circuit current I typ. 1.4 A SC E = 0.5 mW/cm; = 850 nm e Rise time t typ. 0.12 s r V = 5V, R = 50 Ohm, = 850 nm R L Fall time t typ. 0.12 s f V = 5V, R = 50 Ohm, = 850 nm R L Forward voltage V typ. 0.7 V F I = 5 mA F Capacitance C typ. 4.6 pF 0 V = 0V, f = 1 MHz, E = 0 R 2 Version 1.0 | 2018-06-13