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Produktdatenblatt | Version 1.1
SFH 2700
SFH 2700
CHIPLED
Silicon PIN Photodiode
Applications
Industrial Automation (Machine controls, Light
barriers, Vision controls)
Features:
Package: clear epoxy
ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM)
Very small SMT package
Especially suitable for applications from 300 nm to 1100 nm
Ordering Information
Type Photocurrent Photocurrent Ordering Code
typ.
E = 0.5 mW/cm; = 850 nm; V = 5 V E = 0.5 mW/cm; = 850 nm; V = 5 V
e R e R
I I
P P
SFH 2700 1.2 A 1.5 A Q65112A4435
1 Version 1.0 | 2018-06-13
SFH 2700
Maximum Ratings
T = 25 C
A
Parameter Symbol Values
Operating Temperature T min. -40 C
op
max. 100 C
Storage temperature T min. -40 C
stg
max. 100 C
Reverse voltage V max. 16 V
R
ESD withstand voltage V max. 2 kV
ESD
acc. to ANSI/ESDA/JEDEC JS-001 (HBM)
Characteristics
T = 25 C
A
Parameter Symbol Values
Wavelength of max sensitivity typ. 890 nm
S max
Spectral range of sensitivity typ. 300 ... 1100
10%
nm
Radiant sensitive area A typ. 0.35 mm
Dimensions of active chip area L x W typ. 0.59 x 0.59
mm x mm
Half angle typ. 70
Dark current I typ. 0.045 nA
R
V = 5 V max. 5 nA
R
Open-circuit voltage V min. 290 mV
O
E = 0.5 mW/cm; = 850 nm typ. 300 mV
e
Short-circuit current I typ. 1.4 A
SC
E = 0.5 mW/cm; = 850 nm
e
Rise time t typ. 0.12 s
r
V = 5V, R = 50 Ohm, = 850 nm
R L
Fall time t typ. 0.12 s
f
V = 5V, R = 50 Ohm, = 850 nm
R L
Forward voltage V typ. 0.7 V
F
I = 5 mA
F
Capacitance C typ. 4.6 pF
0
V = 0V, f = 1 MHz, E = 0
R
2 Version 1.0 | 2018-06-13