X-On Electronics has gained recognition as a prominent supplier of SFH 3410-2/3-Z Phototransistors across the USA, India, Europe, Australia, and various other global locations. SFH 3410-2/3-Z Phototransistors are a product manufactured by OSRAM. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

SFH 3410-2/3-Z OSRAM

SFH 3410-2/3-Z electronic component of OSRAM
SFH 3410-2/3-Z OSRAM
SFH 3410-2/3-Z Phototransistors
SFH 3410-2/3-Z  Optoelectronics

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See Product Specifications
Part No. SFH 3410-2/3-Z
Manufacturer: OSRAM
Category: Phototransistors
Description: Phototransistors PHOTOTRANSISTOR (ALS) SMT SMART DIL
Datasheet: SFH 3410-2/3-Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4875 ea
Line Total: USD 1.49 
Availability - 1663
Ship by Tue. 04 Feb to Thu. 06 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1663
Ship by Tue. 04 Feb to Thu. 06 Feb
MOQ : 1
Multiples : 1
1 : USD 1.4875
10 : USD 0.9156
100 : USD 0.6457
500 : USD 0.5742
1000 : USD 0.5104
2000 : USD 0.5093
4000 : USD 0.506
10000 : USD 0.4917
24000 : USD 0.4708

   
Manufacturer
Product Category
RoHS - XON
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Maximum Power Dissipation
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Maximum Dark Current
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Collector-Emitter Saturation Voltage
Rise Time
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Minimum Operating Temperature
Maximum Operating Temperature
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Maximum Collector Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SFH 3410-2/3-Z from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SFH 3410-2/3-Z and other electronic components in the Phototransistors category and beyond.

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2007-04-02 Silicon NPN Phototransistor with V Characteristics NPN-Silizium-Fototransistor mit V -Charakteristik Version 1.0 SFH 3410 Features: Besondere Merkmale: Package: Smart DIL Gehuse: Smart DIL Especially suitable for applications from 350 nm to Speziell geeignet fr Anwendungen im Bereich von 970 nm 350 nm bis 970 nm Adapted to human eye sensitivity (V ) Angepat an die Augenempfindlichkeit (V ) SMT package without base connection, suitable for SMT-Bauform ohne Basisanschlu, geeignet fr IR reflow soldering IR-Reflow-Lten Only available on tape and reel Nur gegurtet lieferbar Applications Anwendungen For control and drive circuits Messen / Steuern / Regeln Exposure meter for daylight and artificial light Beleuchtungssensor Sensor for backlight-dimming Dimmungssensor fr Hintergrundbeleuchtung Ambient light detector Umgebungslichtsensor Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer E = 20 lx, Std. Light A, V = 5 V v CE I A PCE SFH 3410 3.2 ... 25 Q65110A1211 SFH 3410-1/2 3.2 ... 10 Q65110A2653 SFH 3410-2/3 5 ... 16 Q65110A2654 SFH 3410-3/4 8 ... 25 Q65110A2655 2007-04-02 1Version 1.0 SFH 3410 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Collector-emitter voltage V 5.5 V CE Kollektor-Emitter-Spannung Collector current I 20 mA C Kollektorstrom Emitter-collector voltage V 0.5 V EC Emitter-Kollektor-Spannung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength of max. sensitivity 570 nm S max Wellenlnge der max. Fotoempfindlichkeit 2 Radiant sensitive area A0.29 mm Bestrahlungsempfindliche Flche Dimensions of chip area L x W 0.75 x 0.75 mm x Abmessung der Chipflche mm Half angle 60 Halbwinkel Capacitance C 3.9 pF CE Kapazitt (V = 0 V, f = 1 MHz, E = 0) CE Photocurrent I > 3.2 A PCE Fotostrom (E = 20 lx, Std. Light A, V = 5 V) v CE Dark current I 3 ( 50) nA CE0 Dunkelstrom (V = 5 V, E = 0) CE 2007-04-02 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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OSRAM Opto Semicon
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OSRAM Opto Semiconductors Inc
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