2015-11-12
High Power Infrared Emitter (940 nm)
Version 1.4
SFH 4045N
Features:
High Power Infrared LED
Short switching time
small package: (WxDxH) 3 mm x 2.65 mm x 1.2mm
SMT Sidelooker
Applications
Interrupters, Lightcurtains
Sensor technology
Proximity sensor
Touchscreen
Industrial electronics
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type: Radiant Intensity Ordering Code
I [mW/sr]
e
I = 70 mA, t = 20 ms
F p
SFH 4045N 90 ( 40) Q65111A3903
Note: Measured at a solid angle of = 0.01 sr
2015-11-12 1Version 1.4 SFH 4045N
Maximum Ratings (T = 25 C)
A
Parameter Symbol Values Unit
Operation and storage temperature range T ; T -40 ... 85 C
op stg
Reverse voltage V 5 V
R
Forward current I 70 mA
F
Surge current I 0.7 A
FSM
(t 100 s, D = 0)
p
Total power dissipation P 140 mW
tot
ESD withstand voltage V 2 kV
ESD
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
1) page 12
Thermal resistance junction - ambient R 540 K / W
thJA
Thermal resistance junction - soldering point R 360 K / W
thJS
2) page 12
Characteristics (T = 25 C)
A
Parameter Symbol Values Unit
Peak wavelength (typ) 950 nm
peak
(I = 70 mA, t = 20 ms)
F p
Centroid wavelength (typ) 940 nm
centroid
(I = 70 mA, t = 20 ms)
F p
Spectral bandwidth at 50% of I (typ) 42 nm
max
(I = 70 mA, t = 10 ms)
F p
Half angle (typ) 9
Dimensions of active chip area (typ) L x W 0.2 x 0.2 mm x
mm
Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 12 ns
e e max r f
(I = 70 mA, R = 50 )
F L
Forward voltage (typ (max)) V 1.6 ( 2) V
F
(I = 70 mA, t = 20 ms)
F p
Forward voltage (typ (max)) V 2.8 V
F
(I = 700 mA, t = 100 s)
F p
Reverse current I not designed for A
R
(V = 5 V) reverse operation
R
Total radiant flux (typ) 40 mW
e
(I = 70 mA, t =20 ms)
F p
2015-11-12 2