X-On Electronics has gained recognition as a prominent supplier of 2SD25730QA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD25730QA Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD25730QA Panasonic

2SD25730QA electronic component of Panasonic
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Part No.2SD25730QA
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 60V 3A MT-3
Datasheet: 2SD25730QA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.8599
10 : USD 0.6787
100 : USD 0.594
500 : USD 0.5578
N/A

   
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RoHS - XON
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We are delighted to provide the 2SD25730QA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD25730QA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2573 Silicon NPN triple diffusion planar type For high current amplification, power amplification Unit: mm 7.50.2 4.50.2 Features Low collector-emitter saturation voltage V CE(sat) Allowing supply with the radial taping 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 Absolute Maximum Ratings T = 25C 0.70.1 a 0.70.1 Parameter Symbol Rating Unit 1.150.2 1.150.2 Collector-base voltage (Emitter open) V 80 V CBO Collector-emitter voltage (Base open) V 60 V CEO 0.50.1 0.40.1 Emitter-base voltage (Collector open) V 6V EBO 0.8 C 1 23 Collector current I 3A C 1: Emitter Peak collector current I 6A CP 2: Collector 2.50.2 2.50.2 Collector power dissipation T = 25CP 1.5 W 3: Base C C MT-3-A1 Package Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 25 mA, I = 0 60 V CEO C B Collector-base cutoff current (Emitter open) I V = 80 V, I = 0 100 A CBO CB E Collector-emitter cutoff current (Base open) I V = 40 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 100 A EBO EB C * Forward current transfer ratio h V = 4 V, I = 0.5 A 500 2 500 FE CE C Collector-emitter saturation voltage V I = 2 A, I = 0.05 A 1.0 V CE(sat) C B Transition frequency f V = 12 V, I = 0.2 A, f = 10 MHz 50 MHz T CE C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank P Q R h 500 to 1 000 800 to 1 500 1 200 to 2 500 FE Publication date: September 2003 SJD00278BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2573 P T I V V I C a C CE CE(sat) C 2.0 10 3.6 I /I =40 C B Without heat sink Ta=25C 3.0 1.6 I =5.0mA B 1 4.5mA 4.0mA Ta=75C 2.4 3.5mA 1.2 3.0mA 2.5mA Ta=25C 1 1.8 10 2.0mA 0.8 1.5mA 1.2 1.0mA Ta=25C 2 10 0.4 0.5mA 0.6 3 0 0 10 0 40 80 120 160012148602 0.01 0.1 1 10 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (A) a CE C h I C V FE C ob CB 2 400 90 IE=0 V =4V CE f=1MHz Ta=25C 75 2 000 Ta=75C 60 1 600 Ta=25C 45 1 200 800 30 Ta=25C 400 15 0 0 1 10 100 1 10 100 1 000 Collector-base voltage V (V) Collector current I (A) CB C 2 SJD00278BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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