X-On Electronics has gained recognition as a prominent supplier of 2SD2620G0L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2620G0L Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2620G0L Panasonic

2SD2620G0L electronic component of Panasonic
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Part No.2SD2620G0L
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 100V 0.02A SSMINI-3
Datasheet: 2SD2620G0L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.1474
10 : USD 0.1244
100 : USD 0.1059
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RoHS - XON
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We are delighted to provide the 2SD2620G0L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2620G0L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification Package Features Code High forward current transfer ratio h FE SSMini3-F3 Low collector-emitter saturation voltage V CE(sat) Marking Symbol: 3B High emitter-base voltage (Collector open) V EBO Pin Name 1: Base Absolute Maximum Ratings T = 25C a 2: Emitter Parameter Symbol Rating Unit 3: Collector Collector-base voltage (Emitter open) V 100 V CBO Collector-emitter voltage (Base open) V 100 V CEO Emitter-base voltage (Collector open) V 15 V EBO Collector current I 20 mA C Peak collector current I 50 mA CP Collector power dissipation P 125 mW C Junction temperature T 125 C j Storage temperature T 55 to +125 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 100 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 100 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 015 V EBO E C Collector-base cutoff current (Emitter open) I V = 60 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 60 V, I = 0 1.0 A CEO CE B Forward current transfer ratio h V = 10 V, I = 2 mA 400 1 200 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.05 0.20 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA, f = 200 MHz 200 MHz T CB E Noise voltage NV V = 10 V, I = 1 mA, G = 80 dB 80 mV CE C V R = 100 k , Function = FLAT g Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: June 2007 SJC00409AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2620G P T I V V I C a C CE CE(sat) C 45 1 I / I = 10 I = 100 A C B T = 25C B a 90 A 80 A 40 120 70 A 60 A 35 50 A 30 40 A T = 85C 80 a 25 30 A 0.1 20 25C 15 25C 20 A 40 10 10 A 5 0 0 0.01 0 40 80 120 01264 8 102 0.1 1 10 100 1 000 ( ) Ambient temperature T C Collector-emitter voltage V (V) ( ) Collector current I mA a CE C I V h I C V C BE FE C ob CB 120 1 000 10 V = 10 V CE V = 10 V CE f = 1 MHz T = 85C a T = 25C a 25C 100 800 25C 80 600 25C T = 85C a 60 25C 400 40 200 20 0 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 1000410 20 300 Base-emitter voltage V (V) Collector current I (mA) Collector-base voltage V (V) BE C CB 2 SJC00409AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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