AN30181A VIN = 2.9V to 5.5V 2ch,0.8A General-purpose High Efficiency Power LSI FEATURES DESCRIPTION z High-speed response DC-DC Step-Down Regulator AN30181A is a power management LSI which has circuit that employs hysteretic control system : DC-DC Step Down Regulators (2-ch) that employs 2-ch (1.2 V, 0.8 A / 1.8 V, 0.8 A) hysteretic control system. z LDO : 1-ch (0.9 V, 10 mA) By this system, when load current changes suddenly, it z Built-in external Pch MOSFET gate drive circuits responds at high speed and minimizes the changes of z Built-in Reset function output voltage. z Built-in Under Voltage Lockout function (UVLO) Since it is possible to use capacitors with small z 24pin Plastic Quad Flat Non-leaded Package (Size : 4 4 mm, 0.5 mm pitch) capacitance and it is unnecessary to use parts for phase compensation, this IC realizes downsizing of set and reducing in the number of external parts. Output voltages are 1.2 V and 1.8 V. Each maximum current is 0.8 A. This LSI has a LDO circuit, external Pch-MOSFET gate drive circuits and a reset circuit of input power supply APPLICATIONS voltage. High Current Distributed Power Systems such as SSD (Solid State Drive), Cellular Phone, etc. SIMPLIFIED APPLICATION EFFICIENCY CURVE DC-DC1 90 3.3V 3.3V 85 80 75 10 k 70 65 EN PCNB RESET PCNT PVIN1 60 55 PVIN1 DIS VIN=3.3V 50 VIN=5.0V 4.7 F FB1 45 VOUT1 40 LX1 2.2 H 1 10 100 1000 PVIN2 10 F Load Current mA PVIN2 FB2 VOUT2 AN30181A 4.7 F Condition : V =3.3V , 5.0V , Vout=1.2V , Cout=10F , Lout=2.2H LX2 IN 2.2 H AVIN 10 F BUF AVIN 1.0 F DC-DC2 4.7 F VREG AGND1 AGND2 PGND1 PGND2 100 1.0 F 95 90 85 80 75 Notes) This application circuit is an example. The operation 70 of mass production set is not guaranteed. You should 65 VIN=3.3V perform enough evaluation and verification on the 60 VIN=5.0V design of mass production set. You are fully 55 50 responsible for the incorporation of the above 1 10 100 1000 application circuit and information in the design of Load Current mA your equipment. Condition : V =3.3V , 5.0V , Vout=1.8V , Cout=10F , Lout=2.2H IN Ver. BEB Publication date: October 2012 1 Efficiency % Efficiency % AN30181A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Notes *1 Supply voltage V 6.0 V IN *3 Operating free-air temperature T 40 to + 85 C *2 opr Operating junction temperature T 40 to + 150 C *2 j Storage temperature T 55 to + 150 C *2 stg *1 Input Voltage Range EN,FB1,FB2 0.3 to (V + 0.3) V IN *3 LX1,LX2,PCNT,PCNTB,DIS, *1 Output Voltage Range 0.3 to (V + 0.3) V IN RESET,BUF,VREG *3 ESD HBM (Human Body Model) 2 kV - Notes) Do not apply external currents and voltages to any pin not specifically mentioned. This product may sustain permanent damage if subjected to conditions higher than the above stated absolute maximum rating. This rating is the maximum rating and device operating at this range is not guaranteeable as it is higher than our stated recommended operating range. When subjected under the absolute maximum rating for a long time, the reliability of the product may be affected. *1:The values under the condition not exceeding the above absolute maximum ratings and the power dissipation. *2:Except for the power dissipation, operating ambient temperature, and storage temperature, all ratings are for Ta = 25C. *3:V is voltage for AVIN, PVIN1 = PVIN2,(V + 0.3) V must not be exceeded 6 V. IN IN POWER DISSIPATION RATING PACKAGE PD(Ta=25C) PD(Ta=85C) Notes JA 9pin Wafer level chip size package 84.9 C /W 1.472 W 0.765 W *1 (WLCSP Type) Note). For the actual usage, please refer to the PD-Ta characteristics diagram in the package specification, follow the power supply voltage, load and ambient temperature conditions to ensure that there is enough margin and the thermal design does not exceed the allowable value. *1:Glass Epoxy Substrate(4 Layers) Glass-Epoxy: 50 X 50 X 0.8t(mm) Die Pad Exposed , Soldered. CAUTION Although this has limited built-in ESD protection circuit, but permanent damage may occur on it. Therefore, proper ESD precautions are recommended to avoid electrostatic damage to the MOS gates Ver. BEB 2