DA3X107K0L

Doc No. TT4-EA-12607 Revision. 3 Product Standards Switching Diode DA3X107K0L DA3X107K0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 2.9 DA3J107K in Mini3 type package 0.4 0.16 3 Features Small reverse current IR High reverse voltage VR Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1 (0.95)(0.95) Marking Symbol: 25 1.9 Packaging 1. Anode Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 2. NC 3. Cathode Panasonic Mini3-G3-B JEITA SC-59A Code TO-236AA/SOT-23 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 300 V Internal Connection Repetitive peak reverse voltage VRRM 300 V 3 Forward current (Average) IF(AV) 100 mA Repetitive peak forwand current IFRM 225 mA *1 IFSM 500 mA Non-repetitive peak forward surge current Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 12 Note) *1: t = 1 s Page 1 of 4 Established : 2010-06-02 Revised : 2013-06-12 1.5 2.8Doc No. TT4-EA-12607 Revision. 3 Product Standards Switching Diode DA3X107K0L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 1.2 V Reverse current IR VR = 300 V 1.0 A Terminal capacitance Ct VR = 6 V, f = 1 MHz 3.0 pF IF = 10 mA, VR = 6 V *1 trr 60 ns Reverse recovery time Irr = 0.25 x IR Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 20 MHz. 3. *1: trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t p r t 10% t rr I F t A 90% V R I = 0.25 I rr R t = 2 s I = 10 mA p F t = 0.35 ns V = 6 V r Pulse Generator Wave Form Analyzer R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2of 4 Established : 2010-06-02 Revised : 2013-06-12