X-On Electronics has gained recognition as a prominent supplier of DA4X101K0R Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. DA4X101K0R Diodes - General Purpose, Power, Switching are a product manufactured by Panasonic. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

DA4X101K0R Panasonic

DA4X101K0R electronic component of Panasonic
DA4X101K0R Panasonic
DA4X101K0R Diodes - General Purpose, Power, Switching
DA4X101K0R  Semiconductors

Images are for reference only
See Product Specifications
Part No. DA4X101K0R
Manufacturer: Panasonic
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SWITCH DIODE GL WNG 2.9x2.8mm
Datasheet: DA4X101K0R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.0742
6000 : USD 0.0742
12000 : USD 0.0742
15000 : USD 0.0742
45000 : USD 0.0742
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5941
10 : USD 0.893
100 : USD 0.1911
500 : USD 0.1607
1000 : USD 0.1232
3000 : USD 0.1036
9000 : USD 0.0964
24000 : USD 0.0947
45000 : USD 0.0839
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
If - Forward Current
Recovery Time
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DA4X101K0R from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DA4X101K0R and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Doc No. TT4-EA-11906 Revision. 3 Product Standards Switching Diode DA4X101K0R DA4X101K0R Silicon epitaxial planar type Unit: mm 2.9 For high speed switching circuits (0.95)(0.95) 0.13 4 3 Features Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 0.65 0.4 1.1 Marking Symbol: 21 (0.2) 1.9 Basic Part Number : Dual DA2J101 (Parallel) Packaging 1. Anode 1 3. Cathode 2 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 2. Anode 2 4. Cathode 1 Panasonic Mini4-G4-B JEITA SC-61AB Code TO-253/SOT-143 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 80 V Internal Connection Maximum peak reverse voltage VRM 80 V 4 3 Forward current Single 100 mA IF(AV) (Average) Double 75 mA Repetitive peak Single 225 mA IFRM forward current Double 170 mA Non-repetitive peak Single 500 mA IFSM *1 Double 375 mA forward surge current 1 2 Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Note) *1: t = 1 s Page 1 of 4 Established : 2009-11-26 Revised : 2013-06-19 1.5 2.8Doc No. TT4-EA-11906 Revision. 3 Product Standards Switching Diode DA4X101K0R Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 0.95 1.20 V Reverse voltage VR IR = 100 A 80 V Reverse current IR VR = 80 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 0.9 2.0 pF IF = 10 mA , VR = 6 V *1 trr 3 ns Reverse recovery time Irr = 0.25 x IR Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1: trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 0.25 I rr R t = 2 s I = 10 mA p F t = 0.35 ns V = 6 V r Pulse Generator Wave Form Analyzer R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2of 4 Established : 2009-11-26 Revised : 2013-06-19

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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PB4
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