DA6X102S0R Panasonic

Doc No. TT4-EA-12392 Revision .2 Product Standards Switching Diode DA6X102S0R DA6X102S0R Silicon epitaxial planar type Unit: mm 2.9 For high speed switching circuits 0.5 0.13 0.3 65 4 Features Short reverse recovery time trr Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 3 1.1 Marking Symbol: 30 (0.95)(0.95) 1.9 Basic Part Number : Dual DA3X102D (Individual) 1. Cathode 1 4. Cathode 3 Packaging 2. Cathode 2 5. Cathode 4 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 3. Anode 3,4 6. Anode 1,2 Panasonic Mini6-G4-B JEITA SC-74 Code SOT-457 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 80 V Internal Connection Maximum peak reverse voltage VRM 80 V 65 4 *1 IF 100 mA Forward current *1 IFM 225 mA Peak forward current *1,*2 IFSM 500 mA Non-repetitive peak forward surge current Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 12 3 Note) *1 Value in single diode used *2 t = 1 s Page 1 of 4 Establishe d: 2010-02-23 Revised : 2013-06-19 1.5 2.8Doc No. TT4-EA-12392 Revision . 2 Product Standards Switching Diode DA6X102S0R Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 1.2 V Reverse voltage VR IR = 100 A 80 V Reverse current IR VR = 80 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 15 pF IF = 10 mA, VR = 6 V *1 trr 10 ns Reverse recovery time Irr = 0.25 x IR Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1: trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 0.25 I rr R t = 2 s I = 10 mA p F t = 0.35 ns V = 6 V r Pulse Generator Wave Form Analyzer R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2of 4 Establishe d : 2010-02-23 Revised : 2013 -06-19