DMA56108 Unit: mm Silicon PNP epitaxial planar type For digital circuits Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: P0 Basic Part Number Dual DRA2152Z (Common emitter) 1: Base (Tr1) 4: Collector (Tr2) Packaging 2: Emitter (Common) 5: Collector (Tr1) DMA561080R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 3: Base (Tr2) Panasonic SMini5-F3-B Absolute Maximum Ratings T = 25C a JEITA SC-113CB Parameter Symbol Rating Unit Code SOT-353 Collector-base voltage (Emitter open) V 50 V CBO Tr1 (C1) (C2) Collector-emitter voltage (Base open) V 50 V CEO 5 4 Tr2 Collector current I 100 mA C Tr1 Tr2 Total power dissipation P 150 mW T R R 2 2 Junction temperature T 150 C j R R 1 1 Overall Operating ambient temperature T 40 to +85 C opr 1 2 3 (B1) (E) (B2) Storage temperature T 55 to +150 C stg R 0.51 k 1 Resistance value R 5.1 k 2 Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 2.0 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 20 FE CE C h 1 * FE h ratio V = 10 V, I = 5 mA 0.50 0.99 FE CE C (Small/Large) Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.0 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.4 V I(off) CE C Input resistance R 30% 0.51 +30% k 1 Resistance ratio R / R 0.08 0.10 0.12 1 2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: September 2013 Ver. CED 1DMA56108 DMA56108 PT-Ta DMA56108 IC-VCE DMA56108 hFE-IC P T I V h I T a C CE FE C 200 120 200 V = 10 V CE T = 25C a 100 I = 800 A 160 B 700 A 150 600 A 80 120 500 A T = 85C a 100 60 400 A 25C 80 40 40C 300 A 50 40 20 200 A 100 A 0 0 0 0 40 80 120 160 200 0 2 4 6 8 10 12 0.1 1 10 100 ( ) Ambient temperature T C Collector-emitter voltage V (V) a Collector current I (mA) CE C DMA56108 I -V DMA56108 VIN-IO DMA56108 VCEsat-IC O IN V I I V V I CE(sat) C O IN IN O 2 10 100 10 I / I = 20 C B V = 5 V V = 0.2 V O O 10 T = 85C a 10 1 25C 1 T = 85C a 40C 1 10 T = 40C 25C a 0.1 1 40C 85C 2 10 3 0.01 10 0.1 0.1 1 10 100 0 0.4 0.8 1.2 0.1 1 10 100 Output current I (mA) Collector current I (mA) (V) Input voltage V O C IN Ver. CED 2 25C Collector-emitter saturation voltage V (V) ( ) CE(sat) Total power dissipation P mW T ( ) Output current I mA O Collector current I (mA) C Input voltage V (V) Forward current transfer ratio h IN FE