DMA5610F
Unit: mm
Silicon PNP epitaxial planar type
For digital circuits
DMA2610F in SMini5 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: R3
Basic Part Number
Dual DRA2143X (Common emitter)
1: Base (Tr1) 4: Collector (Tr2)
2: Emitter (Common) 5: Collector (Tr1)
Packaging
3: Base (Tr2)
DMA5610F0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Panasonic SMini5-F3-B
JEITA SC-113CB
Absolute Maximum Ratings T = 25C
a
Code SOT-353
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V 50 V
CBO (C1) (C2)
5 4
Tr1
Collector-emitter voltage (Base open) V 50 V
CEO
Tr2
Tr1 Tr2
Collector current I 100 mA
C
R R
2 2
Total power dissipation P 150 mW
T
R
R
1
1
Junction temperature T 150 C
j
Overall
1 2 3
Operating ambient temperature T 40 to +85 C
opr
(B1) (E) (B2)
Storage temperature T 55 to +150 C
stg
R 4.7 k
1
Resistance value
R 10 k
2
Electrical Characteristics T = 25C3C
a
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V
CBO C E
Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V
CEO C B
Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A
CBO CB E
Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A
CEO CE B
Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 1.0 mA
EBO EB C
Forward current transfer ratio h V = 10 V, I = 5 mA 30
FE CE C
h
1
* FE
h ratio V = 10 V, I = 5 mA 0.50 0.99
FE CE C
(Small/Large)
Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V
CE(sat) C B
Input voltage (ON) V V = 0.2 V, I = 5 mA 1.7 V
I(on) CE C
Input voltage (OFF) V V = 5 V, I = 100 A 0.6 V
I(off) CE C
Input resistance R 30% 4.7 +30% k
1
Resistance ratio R / R 0.37 0.47 0.57
1 2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Ratio between 2 elements
*
Publication date: September 2013 Ver. DED
1DMA5610F
DMA5610F_PT-Ta DMA5610F_IC-VCE DMA5610F_hFE-IC
P T I V h I
T a C CE FE C
120
200 300
V = 10 V
CE
T = 25C
a
I = 800 A
B
700 A
100
250
600 A
150
80 500 A
200 T = 85C
a
400 A 25C
60
150
100
40C
300 A
40
100
200 A
50
20
50
100 A
0 0 0
0 40 80 120 160 200 0 2 4 6 8 10 12 0.1 1 10 100
Ambient temperature T (C)
Collector-emitter voltage V (V)
a Collector current I (mA)
CE
C
DMA5610F_I -V
DMA5610F_VIN-IO
DMA5610F_VCEsat-IC O IN
V I I V V I
CE(sat) C O IN IN O
10 10 100
I / I = 20
V = 5 V
C B
O
V = 0.2 V
O
T = 85C
a
1
10
1
25C
40C
1
10
T = 40C
T = 85C
a
a
25C
1
0.1
85C
2
10
40C
3
10 0.1
0.01
0 0.5 1.0 1.5 0.1 1 10 100
0.1 1 10 100
Output current I (mA)
Collector current I (mA) Input voltage V (V) O
C IN
Ver. DED
2
25C
Collector-emitter saturation voltage V (V)
Total power dissipation P (mW)
CE(sat)
T
( )
Output current I mA
Collector current I (mA)
O
C
Forward current transfer ratio h
Input voltage V (V)
FE
IN