DMA5610M
Unit: mm
Silicon PNP epitaxial planar type
For digital circuits
DMA2610M in SMini5 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: S1
Basic Part Number
Dual DRA2123J (Common emitter)
1: Base (Tr1) 4: Collector (Tr2)
2: Emitter (Common) 5: Collector (Tr1)
Packaging
3: Base (Tr2)
DMA5610M0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Panasonic SMini5-F3-B
JEITA SC-113CB
Absolute Maximum Ratings T = 25C
a
Code SOT-353
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V 50 V
(C1) (C2)
CBO
5 4
Tr1
Collector-emitter voltage (Base open) V 50 V
CEO
Tr2
Tr1 Tr2
Collector current I 100 mA
C
R R
2 2
Total power dissipation P 150 mW
T
R
R
1
1
Junction temperature T 150 C
j
Overall
1 2 3
Operating ambient temperature T 40 to +85 C
opr (B1) (E) (B2)
Storage temperature T 55 to +150 C
stg
R 2.2 k
1
Resistance value
R 47 k
2
Electrical Characteristics T = 25C3C
a
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V
CBO C E
Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V
CEO C B
Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A
CBO CB E
Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A
CEO CE B
Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.2 mA
EBO EB C
Forward current transfer ratio h V = 10 V, I = 5 mA 80
FE CE C
h
1
* FE
h ratio V = 10 V, I = 5 mA 0.50 0.99
FE CE C
(Small/Large)
Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V
CE(sat) C B
Input voltage (ON) V V = 0.2 V, I = 5 mA 1.2 V
I(on) CE C
Input voltage (OFF) V V = 5 V, I = 100 A 0.4 V
I(off) CE C
Input resistance R 30% 2.2 +30% k
1
Resistance ratio R / R 0.037 0.047 0.057
1 2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Ratio between 2 elements
*
Publication date: September 2013 Ver. DED
1DMA5610M
DMA5610M_PT-Ta
DMA5610M_IC-VCE DMA5610M_hFE-IC
P T I V h I
T a C CE FE C
200 120
300
V = 10 V
CE
T = 25C
a
I = 700 A
B
T = 85C
a
100 250
600 A
150
500 A
25C
80 200
400 A
40C
300 A
100 60
150
200 A
40 100
50
100 A
20 50
0
0 0
0 40 80 120 160 200
0 2 4 6 8 10 12 0.1 1 10 100
( )
Ambient temperature T C
a Collector-emitter voltage V (V) Collector current I (mA)
CE C
DMA5610M_I -V
DMA5610M_VIN-IO
DMA5610M_VCEsat-IC
O IN
V I I V V I
CE(sat) C O IN IN O
10 100
10
I / I = 20
C B V = 5 V
O V = 0.2 V
O
T = 85C
a
1
10
1
25C
1
10
T = 85C
a
T = 40C
a
25C
40C
0.1 1
2
10 85C
40C
3
0.01 10 0.1
0.1 1 10 100 0 0.4 0.8 1.2 0.1 1 10 100
Output current I (mA)
Collector current I (mA)
Input voltage V (V) O
C
IN
Ver. DED
2
25C
Collector-emitter saturation voltage V (V)
( )
CE(sat) Total power dissipation P mW
T
( )
Output current I mA
Collector current I (mA)
O
C
Input voltage V (V) Forward current transfer ratio h
IN FE