DMC26102 Unit: mm Silicon NPN epitaxial planar type For digital circuits Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: F5 Basic Part Number Dual DRC2124E (Common emitter) 1: Base (Tr1) 4: Collector (Tr2) Packaging 2: Emitter (Common) 5: Collector (Tr1) DMC261020R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 3: Base (Tr2) Panasonic Mini5-G3-B Absolute Maximum Ratings T = 25C a JEITA SC-74A Parameter Symbol Rating Unit Code MO-178 Collector-base voltage (Emitter open) V 50 V CBO (C1) (C2) Tr1 5 4 Collector-emitter voltage (Base open) V 50 V CEO Tr2 Collector current I 100 mA C Tr1 Tr2 R R Total power dissipation P 300 mW 2 2 T R R Junction temperature T 150 C 1 1 j Overall Operating ambient temperature T 40 to +85 C opr 1 2 3 (B1) (E) (B2) Storage temperature T 55 to +150 C stg R 22 k 1 Resistance value R 22 k 2 Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.2 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 60 FE CE C 1 h * FE h ratio V = 10 V, I = 5 mA 0.50 0.99 FE CE C (Small/Large) Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 2.6 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.8 V I(off) CE C Input resistance R 30% 22 +30% k 1 Resistance ratio R / R 0.8 1.0 1.2 1 2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: October 2013 Ver. DED 1DMC26102 DMC26102 PT-Ta DMC26102 IC-VCE DMC26102 hFE-IC P T I V h I T a C CE FE C 400 120 V = 10 V CE T = 25C a 400 I = 350 A B 100 T = 85C a 300 A 300 250 A 80 300 25C 200 A 60 200 40C 200 150 A 40 100 A 100 100 20 50 A 0 0 0 0 40 80 120 160 200 0.1 1 10 100 0 2 4 6 8 10 12 ( ) Ambient temperature T C Collector current I (mA) Collector-emitter voltage V (V) a C CE DMC26102 VCEsat-IC DMC26102 I -V DMC26102 VIN-IO O IN V I I V V I CE(sat) C O IN IN O 10 10 100 I / I = 20 C B V = 5 V O V = 0.2 V O 1 T = 85C a 1 10 25C T = 40C a 1 10 25C 40C 85C 0.1 1 T = 85C a 2 10 40C 25C 3 0.01 10 0.1 0.1 1 10 100 0 0.1 1 10 100 0.5 1.0 1.5 2.0 Output current I (mA) Collector current I (mA) (V) O C Input voltage V IN Ver. DED 2 Collector-emitter saturation voltage V (V) CE(sat) ( ) Total power dissipation P mW T ( ) Output current I mA Collector current I (mA) O C Forward current transfer ratio h Input voltage V (V) FE IN