DMC5640M Unit: mm Silicon NPN epitaxial planar type For digital circuits Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: S4 Basic Part Number Dual DRC2123J (Individual) 1: Emitter (Tr1) 4: Emitter (Tr2) Packaging 2: Base (Tr1) 5: Base (Tr2) DMC5640M0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 3: Collector (Tr2) 6: Collector (Tr1) Panasonic SMini6-F3-B Absolute Maximum Ratings T = 25C a JEITA SC-113DB Parameter Symbol Rating Unit Code SOT-363 Collector-base voltage (Emitter open) V 50 V CBO (C1) (B2) (E2) Tr1 6 5 4 Collector-emitter voltage (Base open) V 50 V CEO Tr2 Collector current I 100 mA C R 1 R 2 Tr1 Total power dissipation P 150 mW T Tr2 R 2 R Junction temperature T 150 C 1 j Overall Operating ambient temperature T 40 to +85 C opr 1 2 3 (E1) (B1) (C2) Storage temperature T 55 to +150 C stg R 2.2 kW 1 Resistance value R 47 kW 2 Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 mA CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 mA CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.2 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 80 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.2 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.4 V I(off) CE C Input resistance R -30% 2.2 +30% kW 1 Resistance ratio R / R 0.037 0.047 0.057 1 2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: October 2013 Ver. EED 1DMC5640M DMC5640M IC-VCE DMC5640M hFE-IC DMC5640M PT-Ta P T I V h I T a C CE FE C 500 200 120 V = 10 V CE T = 25C a I = 400 A B 100 350 A 400 T = 85C a 150 300 A 80 25C 250 A 300 60 100 200 A 40C 200 150 A 40 50 100 A 100 20 50 A 0 0 0 0 2 4 6 8 10 12 0.1 1 10 100 0 40 80 120 160 200 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DMC5640M I -V DMC5640M VCEsat-IC DMC5640M VIN-IO O IN V I I V V I CE(sat) C O IN IN O 10 100 10 V = 0.2 V I / I = 20 V = 5 V O C B O T = 85C a 1 25C 1 10 1 10 40C T = 85C 25C a 0.1 1 40C 2 10 T = 85C 40C a 25C 3 0.01 0.1 10 0.1 1 10 100 0 0.4 0.8 1.2 0.1 1 10 100 Output current I (mA) Collector current I (mA) (V) O C Input voltage V IN Ver. EED 2 Collector-emitter saturation voltage V (V) Total power dissipation P (mW) CE(sat) T ( ) Output current I mA O Collector current I (mA) C Forward current transfer ratio h Input voltage V (V) FE IN