DMG563H1 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: T1 Basic Part Number DRC2144E + DRA2143X (Collector-base connection) Packaging 1: Emitter (Tr1) 4: Collecter (Tr2) DMG563H10R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 2: Base (Tr1) 5: Base (Tr2) 3: Emitter (Tr2) Collecter (Tr1) Absolute Maximum Ratings T = 25C a Panasonic SMini5-F3-B Parameter Symbol Rating Unit JEITA SC-113CB Code SOT-353 Collector-base voltage (Emitter open) V 50 V CBO Tr1 Collector-emitter voltage (Base open) V 50 V CEO (B2, C1) (C2) 5 4 Collector current I 100 mA C Collector-base voltage (Emitter open) V 50 V R CBO 1 Tr1 Tr2 Tr2 Collector-emitter voltage (Base open) V 50 V CEO R R 2 2 R 1 Collector current I 100 mA C 1 2 3 Total power dissipation P 150 mW T (E1) (B1) (E2) Junction temperature T 150 C j R 47 k Overall 1 Tr1 Operating ambient temperature T 40 to +85 C opr R 47 k Resistance 2 Storage temperature T 55 to +150 C value stg R 4.7 k 1 Tr2 R 10 k 2 Publication date: November 2013 Ver. CED 1DMG563H1 Electrical Characteristics T = 25C3C a Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.1 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 80 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 3.6 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.8 V I(off) CE C Input resistance R 30% 47 +30% k 1 Resistance ratio R / R 0.8 1.0 1.2 1 2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 1.0 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 30 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.7 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.6 V I(off) CE C Input resistance R 30% 4.7 +30% k 1 Resistance ratio R / R 0.37 0.47 0.57 1 2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Ver. CED 2