DRA2114E0L Panasonic

Doc No. TT4-EA-11715 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2114E0L DRA2114E0L Silicon PNP epitaxial planar type Unit: mm For digital circuits 2.9 Complementary to DRC2114E 0.4 0.16 3 Features Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1 Marking Symbol: LB (0.95)(0.95) 1.9 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic Mini3-G3-B JEITA SC-59A Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Internal Connection Collector current IC -100 mA Total power dissipation PT 200 mW C R 1 B Junction temperature Tj 150 C R 2 Operating ambient temperature Topr -40 to +85 C E Storage temperature Tstg -55 to +150 C Resistance R1 10 k R2 10 k value Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10 A, IE = 0 -50 V Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -0.5 A Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -0.5 mA Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 35 - Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V Vi(on) VCE = -0.2 V, IC = -5 mA -2.1 V Input voltage Vi(off) VCE = -5 V, IC = -100 A -0.8 V Input resistance R1 -30% 10 +30% k Resistance ratio R1/R2 0.8 1.0 1.2 - Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Note) 1. Page 1of 3 Established : 2009-10-29 Revised : 2014-01-20 1.5 2.8Doc No. TT4-EA-11715 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2114E0L Technical Data ( reference ) PT - Ta IC - VCE 250 -0.12 Ta = 25 IB = -800 A -0.1 -700 A 200 -600 A -0.08 -500 A 150 -400 A -0.06 -300 A 100 -0.04 -200 A 50 -0.02 -100 A 0 -0 0 20 40 60 80 100 120 140 160 180 200 -0 -2 -4 -6 -8 -10 -12 Ambient temperature Ta () Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC -10 250 IC/IB = 20 VCE = -10 V 200 Ta = 85 -1 150 25 25 Ta = 85 100 -0.1 -40 50 -40 0 -0.01 -0.0001 -0.001 -0.01 -0.1 -0.0001 -0.001 -0.01 -0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io -1.0E-02 -100 Vo = -5 V Vo = -0.2 V -1.0E-03 Ta = 85 -10 Ta = -40 25 -40 25 -1.0E-04 -1 -1.0E-05 85 -1.0E-06 -0.1 -0 -0.5 -1 -1.5 -2 -0.0001 -0.001 -0.01 -0.1 Input voltage VIN (V) Output current Io (A) Page 2 of 3 Established : 2009-10-29 Revised : 2014-01-20 Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW) Collector-emitter saturation voltage Input voltage VIN (V) Collector current IC (A) VCE(sat) (V)