Doc No. TT4-EA-11668
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRA3114T0L
DRA3114T0L
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
1.2
Complementary to DRC3114T
0.3 0.13
DRA9114T in SSSMini3 type package
3
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
12
0.2 0.52
Marking Symbol:
LD
(0.4) (0.4)
0.8
Packaging
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic SSSMini3-F2-B
JEITA SC-105AA
Absolute Maximum Ratings Ta = 25 C Code SOT-723
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V Internal Connection
Collector current IC -100 mA
C
Total power dissipation PT 100 mW
R
1
B
Junction temperature Tj 150 C
Operating ambient temperature Topr -40 to +85 C
E
Storage temperature Tstg -55 to +150 C
Resistance
R1 10 k
value
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
V
Collector-base voltage (Emitter open) VCBO IC = -10 A, IE = 0 -50
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 A
Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -0.5 A
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -0.01 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 160 460 -
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V
Vi(on) VCE = -0.2 V, IC = -5 mA -1.2 V
Input voltage
Vi(off) VCE = -5 V, IC = -100 A -0.4 V
Input resistance R1 -30% 10 +30% k
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1of 3
Established : 2009-10-23
Revised : 2014-02-07
0.8
1.2Doc No. TT4-EA-11668
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRA3114T0L
Technical Data ( reference )
PT - Ta
IC - VCE
125
-0.12
Ta = 25
IB = -800 A -700 A
-600 A
-0.1
100
-500 A
-0.08
-400 A
75
-300 A
-0.06
50
-200 A
-0.04
-100 A
25
-0.02
0 -0
0 20 40 60 80 100 120 140 160 180 200 -0 -2 -4 -6 -8 -10 -12
Ambient temperature Ta () Collector-emitter voltage VCE (V)
VCE(sat) - IC
hFE - IC
-10
500
IC/IB = 20
VCE = -10 V
450
Ta = 85
400
350
-1
25
300
250
25
Ta = 85
200
-0.1
150
-40
100
-40
50
0
-0.01
-0.0001 -0.001 -0.01 -0.1
-0.0001 -0.001 -0.01 -0.1
Collector current IC (A) Collector current IC (A)
Io - VIN VIN - Io
-1.0E-02 -100
Vo = -5 V
Vo = -0.2 V
-1.0E-03
Ta = 85
-10
25 Ta = -40
25
-1.0E-04
-40
-1
-1.0E-05
85
-1.0E-06 -0.1
-0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -0.0001 -0.001 -0.01 -0.1
Input voltage VIN (V) Output current Io (A)
Page 2 of 3
Established : 2009-10-23
Revised : 2014-02-07
Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW)
Collector-emitter saturation voltage
Input voltage VIN (V)
Collector current IC (A)
VCE(sat) (V)