Doc No. TT4-EA-11620
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRA9115E0L
DRA9115E0L
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
1.6
Complementary to DRC9115E
0.26 0.13
DRA5115E in SSMini3 type package
3
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
12
0.7
Marking Symbol:
LN
(0.5)(0.5)
1.0
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic SSMini3-F3-B
JEITA SC-89
Absolute Maximum Ratings Ta = 25 C Code SOT-490
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V Internal Connection
Collector current IC -100 mA
Total power dissipation PT 125 mW C
R
1
B
Junction temperature Tj 150 C
R
2
Operating ambient temperature Topr -40 to +85 C
E
Storage temperature Tstg -55 to +150 C
Resistance R1 100 k
R2 100 k
value
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO
IC = -10 A, IE = 0 -50 V
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 A
Collector-emitter cutoff current (Base open) ICEO
VCE = -50 V, IB = 0 -0.5 A
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -0.1 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 80 -
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V
Vi(on) VCE = -0.2 V, IC = -5 mA -5.7 V
Input voltage
Vi(off) VCE = -5 V, IC = -100 A -0.8 V
Input resistance R1 -30% 100 +30% k
Resistance ratio R1/R2 0.8 1.0 1.2 -
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1of 3
Established : 2009-10-16
Revised : 2014-02-27
0.85
1.6Doc No. TT4-EA-11620
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRA9115E0L
Technical Data ( reference )
IC - VCE
PT - Ta
150 -0.12
Ta = 25
IB = -800 A -700 A
125
-0.1
-600 A
-500 A
100
-0.08
-400 A
75
-300 A
-0.06
-200 A
50
-0.04
25 -100 A
-0.02
0
-0
0 20 40 60 80 100 120 140 160 180 200
-0 -2 -4 -6 -8 -10 -12
Ambient temperature Ta ()
Collector-emitter voltage VCE (V)
hFE - IC VCE(sat) - IC
-10
350
IC/IB = 20
VCE = -10 V
Ta = 85
300
250
25
-1
200
Ta = 85
25
150
-0.1
-40
100
50
-40
0
-0.01
-0.0001 -0.001 -0.01 -0.1
-0.0001 -0.001 -0.01 -0.1
Collector current IC (A)
Collector current IC (A)
Io - VIN VIN - Io
-1.0E-02 -100
Vo = -5 V
Vo = -0.2 V
-1.0E-03
Ta = 85
25
-10
Ta = -40
-1.0E-04
25
-1
85
-1.0E-05
-40
-1.0E-06
-0.1
-0 -0.5 -1 -1.5 -2
-0.0001 -0.001 -0.01 -0.1
Input voltage VIN (V)
Output current Io (A)
Page 2 of 3
Established : 2009-10-16
Revised : 2014-02-27
Output current Io (A)
Total power dissipation PT (mW)
Forward current transfer ratio hFE
Collector current IC (A)
Collector-emitter saturation voltage
Input voltage VIN (V)
VCE(sat) (V)