Doc No. TT4-EA-11631
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRA9143Z0L
DRA9143Z0L
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
1.6
Complementary to DRC9143Z
0.26 0.13
DRA5143Z in SSMini3 type package
3
Features
High forward current transfer ratio hFE
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
12
0.7
Marking Symbol:
L8
(0.5)(0.5)
1.0
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic SSMini3-F3-B
JEITA SC-89
Absolute Maximum Ratings Ta = 25 C Code SOT-490
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V Internal Connection
Collector current IC -100 mA
Total power dissipation PT 125 mW C
R
1
B
Junction temperature Tj 150 C
R
2
Operating ambient temperature Topr -40 to +85 C
E
Storage temperature Tstg -55 to +150 C
Resistance R1 4.7 k
R2 47 k
value
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO
IC = -10 A, IE = 0 -50 V
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 A
Collector-emitter cutoff current (Base open) ICEO
VCE = -50 V, IB = 0 -0.5 A
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -0.2 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 80 400 -
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V
Vi(on) VCE = -0.2 V, IC = -5 mA -1.3 V
Input voltage
Vi(off) VCE = -5 V, IC = -100 A -0.4 V
Input resistance R1 -30% 4.7 +30% k
Resistance ratio R1/R2 0.08 0.10 0.12 -
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Note) 1.
Page 1of 3
Established : 2009-10-16
Revised : 2014-02-24
0.85
1.6Doc No. TT4-EA-11631
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRA9143Z0L
Technical Data ( reference )
PT - Ta
IC - VCE
150
-0.12
Ta = 25
IB = -600 A
125
-0.1
-500 A
100
-0.08
-400 A
75 -0.06
-300 A
-200 A
50 -0.04
-100 A
25 -0.02
0 -0
0 20 40 60 80 100 120 140 160 180 200
-0 -2 -4 -6 -8 -10 -12
Ambient temperature Ta () Collector-emitter voltage VCE (V)
hFE - IC VCE(sat) - IC
-10
300
IC/IB = 20
VCE = -10 V
Ta = 85
-1
200
25
25
Ta = 85
100
-0.1
-40
-40
0
-0.01
-0.0001 -0.001 -0.01 -0.1
-0.0001 -0.001 -0.01 -0.1
Collector current IC (A)
Collector current IC (A)
VIN - Io
Io - VIN
-100
-1.0E-02
Vo = -0.2 V
Vo = -5 V
Ta = 85
-1.0E-03
-10
-40
Ta = -40
25
-1.0E-04
25
-1
-1.0E-05
85
-0.1
-1.0E-06
-0.0001 -0.001 -0.01 -0.1
-0 -0.5 -1 -1.5
Output current Io (A)
Input voltage VIN (V)
Page 2 of 3
Established : 2009-10-16
Revised : 2014-02-24
Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW)
Collector current IC (A)
Collector-emitter saturation voltage
Input voltage VIN (V)
VCE(sat) (V)