Doc No. TT4-EA-11752 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2143T0L DRC2143T0L Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.9 Complementary to DRA2143T 0.4 0.16 3 Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1 Marking Symbol: NA (0.95)(0.95) 1.9 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic Mini3-G3-B JEITA SC-59A Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Internal Connection Collector current IC 100 mA Total power dissipation PT 200 mW C R 1 B Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C E Storage temperature Tstg -55 to +150 C Resistance R1 4.7 k value Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 A Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 160 460 - Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V Vi(on) VCE = 0.2 V, IC = 5 mA 1.0 V Input voltage Vi(off) VCE = 5 V, IC = 100 A 0.4 V Input resistance R1 -30% 4.7 +30% k Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 1of 3 Page Established : 2009-10-30 Revised : 2014-03-20 1.5 2.8Doc No. TT4-EA-11752 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2143T0L Technical Data ( reference ) PT - Ta IC - VCE 250 0.12 Ta = 25 0.1 200 IB = 350 A 0.08 150 300 A 0.06 250 A 200 A 100 0.04 150 A 100 A 50 0.02 50 A 0 0 0 20 40 60 80 100 120 140 160 180 200 02 468 10 12 Ambient temperature Ta () Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC 10 500 IC/IB = 20 VCE = 10 V 450 Ta = 85 400 350 1 25 300 250 -40 Ta = 85 25 200 0.1 150 100 50 -40 0 0.01 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io 1.E-02 100 Vo = 5 V Vo = 0.2 V 1.E-03 Ta = 85 10 25 Ta = -40 1.E-04 25 -40 1 1.E-05 85 1.E-06 0.1 00.2 0.4 0.6 0.811.2 0.0001 0.001 0.01 0.1 Input voltage VIN (V) Output current Io (A) 2of 3 Page Established : 2009-10-30 Revised : 2014-03-20 Total power dissipation PT (mW) Output current Io (A) Forward current transfer ratio hFE Input voltage VIN (V) Collector-emitter saturation voltage Collector current IC (A) VCE(sat) (V)