Doc No. TT4-EA-12489
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRC2144G0L
DRC2144G0L
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
2.9
0.4 0.16
Features
3
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1 2
Marking Symbol:
NU
1.1
(0.95)(0.95)
Packaging
1.9
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic Mini3-G3-B
JEITA SC-59A
Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V Internal Connection
Collector current IC 100 mA
C
Total power dissipation PT 200 mW
B
R
Junction temperature Tj 150 C
2
E
Operating ambient temperature Topr -40 to +85 C
Storage temperature Tstg -55 to +150 C
Resistance
47
R2 k
value
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 A
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 A
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 2.0 mA
Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 80 -
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V
Vi(on) VCE = 0.2 V, IC = 5 mA 0.9 V
Input voltage
Vi(off) VCE = 5 V, IC = 100 A 0.4 V
Between emitter base resistance R2 -30% 47 +30%
k
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1of 3
Established : 2010-03-26
Revised : 2014-03-07
1.5
2.8Doc No. TT4-EA-12489
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRC2144G0L
Technical Data ( reference )
IC - VCE
PT - Ta
250 0.12
Ta = 25
IB = 350 A
0.1
200
0.08
300 A
150
250 A
0.06
200 A
100
150 A
0.04
100 A
50
0.02
50 A
0
0
0 20 40 60 80 100 120 140 160 180 200
02 468 10 12
Ambient temperature Ta ()
Collector-emitter voltage VCE (V)
hFE - IC VCE(sat) - IC
10
450
IC/IB = 20
VCE = 10 V
400
350
Ta = 85 C
1
300
250
25 C
25 C
200 Ta = 85 C
150 0.1
100
-40 C
50
-40 C
0
0.01
0.0001 0.001 0.01 0.1
0.0001 0.001 0.01 0.1
Collector current IC (A)
Collector current IC (A)
Io - VIN VIN - Io
1.E-02 100
Vo = 5 V
Vo = 0.2 V
Ta = 85 C
1.E-03
10
Ta = -40 C
25 C
-40 C
25 C
1.E-04
1
1.E-05
85 C
1.E-06 0.1
0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1
Input voltage VIN (V) Output current Io (A)
Page 2 of 3
Established : 2010-03-26
Revised : 2014-03-07
Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW)
Collector current IC (A)
Input voltage VIN (V)
Collector-emitter saturation voltage
VCE(sat) (V)