Doc No. TT4-EA-12305 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2523E0L DRC2523E0L Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.9 Complementary to DRA2523E 0.4 0.16 3 Features Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1 Marking Symbol: T1 (0.95)(0.95) 1.9 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic Mini3-G3-B JEITA SC-59A Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Internal Connection Collector current IC 500 mA C Total power dissipation PT 200 mW R 1 B Junction temperature Tj 150 C R 2 Operating ambient temperature Topr -40 to +85 C E Storage temperature Tstg -55 to +150 C Resistance R1 2.2 k R2 2.2 k value Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 1 A Collector-emitter cutoff current (Base open) ICEO 1 A VCE = 50 V, IB = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 5mA Forward current transfer ratio hFE VCE = 10 V, IC = 100 mA 40 - Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 5 mA 0.25 V Vi(on) VCE = 0.2 V, IC = 50 mA 2.6 V Input voltage Vi(off) VCE = 5 V, IC = 100 A 0.7 V Input resistance R1 -30% 2.2 +30% k Resistance ratio R1/R2 0.8 1.0 1.2 - Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Note) 1. 1of 3 Page Established : 2010-02-04 Revised : 2014-03-20 1.5 2.8Doc No. TT4-EA-12305 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2523E0L Technical Data ( reference ) PT - Ta IC - VCE 250 0.2 Ta = 25 IB = 1.0 mA 200 0.9 mA 0.15 0.8 mA 150 0.1 0.7 mA 100 0.6 mA 0.05 0.5 mA 50 0.4 mA 0.3 mA 0 0 0 20 40 60 80 100 120 140 160 180 200 02 468 10 12 Ambient temperature Ta () Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC 10 250 IC/IB = 20 VCE = 10 V 200 Ta = 85 1 150 25 100 25 Ta = 85 0.1 50 -40 -40 0 0.01 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io 1.E-02 100 Vo = 5 V Vo = 0.2 V Ta = 85 1.E-03 10 25 Ta = -40 -40 25 1.E-04 1 1.E-05 85 1.E-06 0.1 00.5 11.5 2 0.001 0.01 0.1 1 Input voltage VIN (V) Output current Io (A) 2of 3 Page Established : 2010-02-04 Revised : 2014-03-20 Total power dissipation PT (mW) Output current Io (A) Forward current transfer ratio hFE Input voltage VIN (V) Collector-emitter saturation voltage Collector current IC (A) VCE(sat) (V)