Doc No. TT4-EA-12306
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRC2523Y0L
DRC2523Y0L
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
2.9
Complementary to DRA2523Y 0.4 0.16
3
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1 2
1.1
Marking Symbol:
TH
(0.95)(0.95)
1.9
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic Mini3-G3-B
JEITA SC-59A
Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V Internal Connection
Collector current IC 500 mA
C
Total power dissipation PT 200 mW
R
1
B
Junction temperature Tj 150 C
R
2
Operating ambient temperature Topr -40 to +85 C
E
Storage temperature Tstg -55 to +150 C
Resistance R1 2.2 k
R2 10 k
value
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 1 A
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 1 A
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 1 mA
Forward current transfer ratio hFE VCE = 10 V, IC = 100 mA 60 -
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 5 mA 0.25 V
Vi(on) VCE = 0.2 V, IC = 50 mA 1.9 V
Input voltage
Vi(off) VCE = 5 V, IC = 100 A 0.4 V
Input resistance R1 -30% 2.2 +30%
k
Resistance ratio R1/R2 0.17 0.22 0.27 -
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Note) 1.
1of 3
Page
Established : 2010-02-04
Revised : 2014-03-25
1.5
2.8Doc No. TT4-EA-12306
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRC2523Y0L
Technical Data ( reference )
PT - Ta IC - VCE
250
0.3
IB = 1.0 mA
Ta = 25
0.25
200
0.9 mA
0.2 0.8 mA
150
0.7 mA
0.6 mA
0.15
0.5 mA
100
0.1
0.4 mA
0.3 mA
50
0.05
0.2 mA
0.1 mA
0 0
0 20 40 60 80 100 120 140 160 180 200
02 468 10 12
Ambient temperature Ta () Collector-emitter voltage VCE (V)
hFE - IC
VCE(sat) - IC
10
350
IC/IB = 20
VCE = 10 V
300
Ta = 85
250
1
200
25
150
Ta = 85
25
0.1
100
-40
50
-40
0
0.01
0.0001 0.001 0.01 0.1 1
0.001 0.01 0.1 1
Collector current IC (A)
Collector current IC (A)
Io - VIN VIN - Io
1.E-02 100
Vo = 5 V
Vo = 0.2 V
Ta = 85
1.E-03
10
25
-40
25
Ta = -40
1.E-04
1
1.E-05
85
1.E-06
0.1
00.511.5
0.001 0.01 0.1 1
Input voltage VIN (V) Output current Io (A)
2of 3
Page
Established : 2010-02-04
Revised : 2014-03-25
Total power dissipation PT (mW)
Output current Io (A) Forward current transfer ratio hFE
Input voltage VIN (V)
Collector-emitter saturation voltage
Collector current IC (A)
VCE(sat) (V)