DRC9A14E0L Panasonic

This product complies with the RoHS Directive (EU 2002/95/EC). DRA9A14E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC9A14E DRA5A14E in SSMini3 type package Features Package Low collector-emitter saturation voltage V Code CE(sat) Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-free package Pin Name 1: Base Packaging 2: Emitter 3: Collector Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Marking Symbol: GH Absolute Maximum Ratings T = 25C a Internal Connection Parameter Symbol Rating Unit C Collector-base voltage (Emitter open) V 50 V CBO R 1 B Collector-emitter voltage (Base open) V 50 V CEO R 2 E Collector current I 80 mA C Total power dissipation P 125 mW T R 10 k 1 Resistance value Junction temperature T 150 C j R 10 k 2 Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.5 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 35 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 2.1 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.8 V I(off) CE C Input resistance R 30% 10 +30% k 1 Resistance ratio R / R 0.8 1.0 1.2 1 2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: September 2011 Ver. BED 1This product complies with the RoHS Directive (EU 2002/95/EC). DRA9A14E DRA9A14E_hFE-IC DRA9A14E_PT-Ta DRA9A14E_IC-VCE P T I V h I T a C CE FE C 140 150 100 T = 25C a V = 10 V CE 120 80 T = 85C a 0.6 mA 0.7 mA 100 100 25C 60 I = 0.8 mA B 80 0.5 mA 0.4 mA 60 40 0.3 mA 30C 50 40 0.2 mA 20 20 0.1 mA 0 0 0 1 2 10 1 10 10 0 40 80 120 160 200 0 2 4 6 8 10 12 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DRA9A14E_I -V DRA9A14E_VCEsat-IC O IN DRA9A14E_VIN-IO V I I V V I CE(sat) C O IN IN O 2 10 10 10 I / I = 20 V = 5 V V = 0.2 V C B O O T = 85C a 1 10 1 25C T = 30C a T = 85C 1 a 10 25C 25C 1 10 1 85C 30C 30C 2 10 2 3 1 10 10 10 1 2 1 2 10 1 10 10 0 0.5 1.0 1.5 2.0 2.5 10 1 10 10 Output current I (mA) Collector current I (mA) Input voltage V (V) O C IN Ver. BED 2 Collector-emitter saturation voltage V (V) Total power dissipation P (mW) CE(sat) T ( ) Output current I mA Collector current I (mA) O C Forward current transfer ratio h Input voltage V (V) FE IN